We report the development of Ga_0.5In_0.5P/GaAs monolithic tandem solar cells grown by dynamic hydride vapor phase epitaxy, a III‐V semiconductor growth alternative to metalorganic vapor phase epitaxy with the potential to reduce growth costs. The tandem device consists of 3 components: a 1.88 eV band gap (E_G) Ga_0.5In_0.5P top cell, a p‐Ga_0.5In_0.5P/n‐GaAs tunnel junction, and a 1.41 eV rear heterojunction GaAs cell. The open circuit voltage (V_OC) and fill factor are 2.40 V and 88.4%, respectively, indicative of high material quality. Electroluminescence measurements show that the individual V_OC of the top and bottom cell are 1.40 and 1.00 V, respectively, yielding E_G‐voltage offsets (W_OC) of 0.48 and 0.41 V. The W_OC of the top cell is higher because of an unpassivated front surface rather than the bulk material quality. The Ga_0.5In_0.5P top cell limits the current of this series‐connected device for this reason to a short‐circuit current density (J_SC) of 11.16 ± 0.15 mA/cm² yielding an overall efficiency of 23.7% ± 0.3%. We show through modeling that thinning the emitter will improve the present result, with a clear pathway toward 30% efficiency with the existing material quality. This result is a promising step toward the realization of high‐efficiency III‐V multijunction devices with reduced growth cost.

中文翻译：

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动态氢化物气相外延生长的多结Ga0.5In0.5P / GaAs太阳能电池

我们报告了通过动态氢化物气相外延生长的Ga _0.5 In _0.5 P / GaAs整体式串联太阳能电池的发展情况，这是金属有机气相外延的III-V半导体生长替代品，具有降低生长成本的潜力。串联器件由3个组件组成：1.88 eV带隙（E _G）Ga _0.5 In _0.5 P顶部电池，ap-Ga _0.5 In _0.5 P / n-GaAs隧道结和1.41 eV后异质结GaAs电池。开路电压（V _OC）和填充系数分别为2.40 V和88.4％，表明材料质量高。电致发光测量表明，单个V顶部电池和底部电池的_OC分别为1.40和1.00 V，产生的E _G电压偏移（W _OC）为0.48和0.41V。由于未钝化的前表面而不是整体，顶部电池的W _OC较高。材料质量。因此，Ga _0.5 In _0.5 P顶部电池将此串联设备的电流限制为11.16±0.15 mA / cm ²的短路电流密度（J _SC）总效率为23.7％±0.3％。我们通过建模表明，使发射极变薄将改善当前结果，并且在现有材料质量的情况下，达到30％效率的明确途径。这一结果是朝着实现具有降低的增长成本的高效III-V多结器件迈出的有希望的一步。