Two‐dimensional (2D) in‐plane p–n junctions with a continuous interface have great potential in next‐generation devices. To date, the general fabrication strategies rely on lateral epitaxial growth of p‐ and n‐type 2D semiconductors. An in‐plane p–n junction is fabricated with homogeneous monolayer Te at the step edge on graphene/6H‐SiC(0001). Scanning tunneling spectroscopy reveals that Te on the terrace of trilayer graphene is p‐type, and it is n‐type on monolayer graphene. Atomic‐resolution images demonstrate the continuous lattice of the junction, and mappings of the electronic states visualize the type‐II band bending across the space‐charge region of 6.2 nm with a build‐in field of 4 × 10⁵ V cm⁻¹. The reported strategy can be extended to other 2D semiconductors on patternable substrates for designed fabrication of in‐plane junctions.

中文翻译：

---

用均质材料的连续晶格实现平面内p–n结

具有连续接口的二维（2D）平面内p–n连接在下一代设备中具有巨大潜力。迄今为止，一般的制造策略都依赖于p型和n型2D半导体的横向外延生长。在石墨烯/ 6H-SiC（0001）的台阶边缘处制作了具有均质单层Te的面内PN结。扫描隧道光谱表明，三层石墨烯平台上的Te为p型，而在单层石墨烯上为n型。原子分辨率图像显示了结的连续晶格，并且电子态的映射显示了II型能带在6.2 nm的空间电荷区域上的弯曲，其内建场为4×10 ⁵ V cm ^-1。报告的策略可以扩展到可图案化基板上的其他2D半导体，以进行平面内结的设计制造。