AbstractA multistep paper-based analytical device (mPAD) was designed and applied to the voltammetric determination of total inorganic arsenic. The electrodeposition of gold nanoparticles on a boron-doped diamond (AuNP/BDD) electrode and the determination of total inorganic arsenic is accomplished with a single device. Total inorganic arsenic can be determined by first reducing As(V) to As(III) using thiosulfate in 1.0 mol L−1 HCl. As(III) is then deposited on the electrode surface, and total inorganic arsenic is quantified as As(III) by square-wave anodic stripping voltammetry the potential range between −0.25 V and 0.35 V (vs. Ag/AgCl), best at around 0.05 V. Under optimal conditions, the voltammetric response for As(III) detection is linear in the range from 0.1 to 1.5 μg mL−1 and the limit of detection (3SD/slope) is 20 ng mL−1. The relative standard deviation at 0.3, 0.7 and 1.0 μg mL−1 of As(III) are 3.6, 4.3 and 3.3, respectively (10 different electrodes). The results show that the assay has high precision, a rather low working potential, and excellent sensor-to-sensor reproducibility. The method was employed to the determination of total inorganic arsenic in rice samples. Results agreed well with those obtained by inductively coupled plasma-optical emission spectroscopy (ICP-OES). Graphical abstractA multistep paper-based analytical device (mPAD) is described that integrates a AuNP/BDD electrode preparation step and a detection step into a single device. The AuNPs are easily deposited on the BDD electrode by applying electrodeposition potential. The total inorganic arsenic concentration in rice samples was determined by using square-wave anodic stripping voltammetry.

中文翻译：

---

在纸基设备上使用金纳米颗粒修饰的掺硼金刚石电极阳极溶出伏安法测定总砷

摘要 设计了一种多步纸基分析仪（mPAD），并将其应用于总无机砷的伏安法测定。金纳米粒子在掺硼金刚石 (AuNP/BDD) 电极上的电沉积和总无机砷的测定是用单个设备完成的。总无机砷可以通过首先使用硫代硫酸盐在 1.0 mol L-1 HCl 中将 As(V) 还原为 As(III) 来确定。然后将 As(III) 沉积在电极表面上，通过方波阳极溶出伏安法将总无机砷量化为 As(III)，电位范围在 -0.25 V 和 0.35 V 之间（相对于 Ag/AgCl），最好在约 0.05 V。在最佳条件下，As(III) 检测的伏安响应在 0.1 至 1.5 μg mL-1 范围内呈线性，检测限（3SD/斜率）为 20 ng mL-1。As(III) 在 0.3、0.7 和 1.0 μg mL-1 的相对标准偏差分别为 3.6、4.3 和 3.3（10 个不同的电极）。结果表明，该测定具有高精度、相当低的工作潜力和出色的传感器间重现性。该方法用于测定大米样品中的总无机砷。结果与通过电感耦合等离子体光发射光谱 (ICP-OES) 获得的结果非常吻合。图形摘要描述了一种多步纸基分析设备 (mPAD)，它将 AuNP/BDD 电极制备步骤和检测步骤集成到一个设备中。通过施加电沉积电位，AuNPs 很容易沉积在 BDD 电极上。采用方波阳极溶出伏安法测定大米样品中的总无机砷浓度。