N‐Type Surface Doping of MAPbI3 via Charge Transfer from Small Molecules,Advanced Electronic Materials

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N‐Type Surface Doping of MAPbI3 via Charge Transfer from Small Molecules
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2018-06-10 , DOI: 10.1002/aelm.201800087
Erin E. Perry ₁ , John G. Labram ₁ , Naveen R. Venkatesan ₁ , Hidenori Nakayama _{2,

3} , Michael L. Chabinyc ₁

Affiliation

Organic hole and electron transport materials are regularly employed as electron‐ and hole‐blocking layers in perovskite thin‐film solar cells. In order to optimize charge extraction in the device, these organic layers can be doped using organic small molecules. However, to date there is little work carried out on direct doping of perovskite surfaces. In this report, the change in electrical properties of thin films of MAPbI₃ by surface doping the film with an organic dopant molecule: cobaltocene (Co(C₅H₅)₂) is studied. By varying the quantity of cobaltocene deposited, the conductivity of MAPbI₃ thin films is observed to be tunable over several orders of magnitude. A tunable shift in the Fermi level illustrating that charge transfer doping enables control over the interfacial energy levels, is observed. An increase in photoconductivity is seen at intermediate doping levels, indicating passivation of surface traps confirmed by increased photoluminescence. This model system provides a means to understand more complex heterointerfaces of doped organic blends at perovskite surfaces.

中文翻译：

通过小分子的电荷转移对MAPbI3进行N型表面掺杂

在钙钛矿薄膜太阳能电池中，通常将有机空穴和电子传输材料用作电子和空穴阻挡层。为了优化器件中的电荷提取，可以使用有机小分子对这些有机层进行掺杂。但是，迄今为止，在钙钛矿表面的直接掺杂方面几乎没有进行任何工作。在该报告中，研究了通过用有机掺杂剂分子钴（Co（C ₅ H ₅）₂）对膜表面进行掺杂来改变MAPbI ₃薄膜的电学性质。通过改变沉积钴的量，MAPbI ₃的电导率观察到薄膜在几个数量级上是可调的。观察到费米能级的可调位移，表明电荷转移掺杂能够控制界面能级。在中等掺杂水平下可见到光电导性的增加，表明通过增加的光致发光证实了表面陷阱的钝化。该模型系统提供了一种了解钙钛矿表面掺杂有机共混物更复杂的异质界面的方法。

更新日期：2018-06-10

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