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Low-temperature sintering and microwave dielectric properties of B2O3-added ZnO-deficient Zn2GeO4 ceramics for advanced substrate application
Journal of the European Ceramic Society ( IF 5.8 ) Pub Date : 2018-06-09 , DOI: 10.1016/j.jeurceramsoc.2018.06.018
Xing-Hua Ma , Sang-Hyo Kweon , Mir Im , Sahn Nahm

ZnO-deficient Zn2-xGeO4-x ceramics with 0.05 ≤ x ≤ 0.15 were synthesized because a ZnO secondary phase is formed in the stoichiometric Zn2GeO4 ceramics synthesized using micrometer-sized ZnO and GeO2 powders. The Zn1.9GeO3.9 ceramic sintered at 1000 °C showed a homogeneous Zn2GeO4 phase with good microwave dielectric properties: εr of 6.8, Q × f of 49,000 GHz, and τf of −16.7 ppm/°C. However, its sintering temperature was still too high for it to be used as an advanced substrate for low-temperature co-fired ceramic devices. Therefore, various amounts of B2O3 were added to the Zn1.9GeO3.9 ceramics to reduce their sintering temperature. Owing to the formation of a B2O3-GeO2 liquid phase, these ceramics were well sintered at low temperatures between 925 °C and 950 °C. In particular, 15 mol% B2O3-added Zn1.9GeO3.9 ceramic sintered at 950 °C showed promising microwave dielectric properties for advanced substrates without the reaction with an Ag electrode: εr = 6.9, Q × f = 79,000 GHz, and τf = −15 ppm/°C.



中文翻译:

添加B 2 O 3的ZnO不足Zn 2 GeO 4陶瓷的低温烧结和微波介电性能。

ZnO类缺陷的Zn 2- X的GeO 4- X与陶瓷0.05≤  X  ≤因为在化学计量的Zn形成的ZnO二次相0.15合成2的GeO 4个使用微米大小的ZnO和合成的GeO陶瓷2成粉末。锌1.9的GeO 3.9陶瓷在1000烧结℃下表现出均匀的Zn 2的GeO 4相具有良好的介电性能:ε - [R 6.8,Q  ×  ˚F 49000千兆赫,和τ ˚F-16.7 ppm /°C。但是,其烧结温度仍然太高,不能用作低温共烧陶瓷器件的高级基材。因此,向Zn 1.9 GeO 3.9陶瓷中添加了各种数量的B 2 O 3,以降低其烧结温度。由于形成了B 2 O 3 -GeO 2液相,这些陶瓷在925°C至950°C的低温下进行了很好的烧结。特别地,添加15mol%的B 2 O 3的Zn 1.9 GeO 3.9在950陶瓷烧结℃下显示出有希望用于先进基板微波介电性能而不与Ag电极的反应:ε - [R  = 6.9,Q  ×  ˚F  = 79000千兆赫,和τ ˚F  = -15 PPM /℃。

更新日期:2018-06-09
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