Potassium‐treated Cu (In,Ga)(S,Se)₂ (CIGSSe)‐based solar cell with power conversion efficiency (η) of 19.4% is obtained using high transparent Cd_0.75Zn_0.25S/Zn_0.79Mg_0.21O/Zn_0.88Mg_0.12O:Al layers to minimize optical loss at short wavelength (~520 nm) and to control total conduction band minimum alignment. To further enhance η, the post treatment named HLS + LS process, including heat‐light soaking (HLS) at 110°C under AM 1.5G illumination followed by light soaking (LS) under AM 1.5G illumination, is conducted successively on the as‐fabricated solar cell. It is revealed that HLS in the HLS + LS process mainly yields the increase in open‐circuit voltage. On the other hand, LS in the HLS + LS process primarily leads to the increase in fill factor, attributable to the decrease in sheet resistance of Zn_0.88Mg_0.12O:Al. The HLS + LS process consequently gives rise to not only the enhancement of carrier concentration but also the decrease in the recombination rate at the buffer/absorber interface through passivating the recombination centers. As a result, 21.2%‐efficient CIGSSe solar cell with the Cd_0.75Zn_0.25S/Zn_0.79Mg_0.21O/Zn_0.88Mg_0.12O:Al layers is attained after the HLS + LS process, which is an effective process to enhance photovoltaic performances.

中文翻译：

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通过热浸和光浸工艺相结合来提高Cu（In，Ga）（S，Se）2太阳能电池的光伏性能

使用高透明Cd _0.75 Zn _0.25 S / Zn _0.79 Mg _0.21 O / Zn获得功率转换效率（η）为19.4％的钾处理的Cu（In，Ga）（S，Se）₂（CIGSSe）基太阳能电池_0.88镁_0.12O：Al层可最大程度减少短波长（〜520 nm）的光损耗并控制总导带最小对准。为了进一步提高η，在薄膜上依次进行了称为HLS + LS的后处理，包括在AM 1.5G光照下于110°C的热浸（HLS），然后在AM 1.5G光照下进行光浸（LS）。预制太阳能电池。结果表明，HLS + LS过程中的HLS主要导致开路电压的增加。另一方面，HLS + LS工艺中的LS主要导致填充系数的增加，这归因于Zn _0.88 Mg _0.12的薄层电阻的降低O：Al。因此，HLS + LS工艺不仅通过钝化重组中心提高了载流子浓度，而且还降低了缓冲液/吸收剂界面的重组率。结果，在HLS + LS工艺之后，可获得具有Cd _0.75 Zn _0.25 S / Zn _0.79 Mg _0.21 O / Zn _0.88 Mg _0.12 O：Al层的21.2％效率的CIGSSe太阳能电池，这是增强光伏发电的有效工艺表演。