The Bi_0.9Er_0.1Fe_0.96Mn_0.02Co_0.02O₃/Co_1-xMn_xFe₂O₄ (BEFMCO/CM_xFO) thin films have been deposited by sol-gel method. Structural distortion is observed in the BEFMCO with the appearance of trigonal-R-3m: H in the CM_xFO. The enhanced multiferroic properties, well electrically writable and ferroelectric switching properties are obtained in BEFMCO/CM_xFO thin films. The investigation indicates that the structural transformation of the CM_xFO influences the structure and multiferroic properties of BEFMCO and the interfacial effects between BEFMCO and CM_xFO layers. This transformation and Mn-doping cause the change of carriers, which solves the problem that the magnetic layer exacerbates the ferroelectric properties. It promotes to form the weak local electric field, which causes the weak interface effect, and brings out the weak resistive switching in the BEFMCO/CM_xFO thin films. Therefore, it is believed that the BEFMCO/CM_xFO films can offer a potentially tunable structural transformation of composite films for practical applications.

通过溶胶-凝胶法沉积Bi _0.9 Er _0.1 Fe _0.96 Mn _0.02 Co _0.02 O ₃ / Co _1-x Mn _x Fe ₂ O ₄（BEFMCO / CM _x FO）薄膜。在BEFMCO中观察到结构变形，在CM _x FO中出现三角R-3m：H 。在BEFMCO / CM _x FO薄膜中获得了增强的多铁性，良好的电可写性和铁电开关特性。调查表明CM _x的结构转变FO影响BEFMCO的结构和多铁性以及BEFMCO和CM _x FO层之间的界面效应。这种转变和Mn掺杂引起载流子的变化，从而解决了磁性层加剧铁电性能的问题。它促进形成弱的局部电场，从而引起弱的界面效应，并在BEFMCO / CM _x FO薄膜中产生弱的电阻切换。因此，相信BEFMCO / CM _x FO膜可以为实际应用提供复合膜的潜在可调结构转变。