Abstract Boron nitride films were grown on 2-inch sapphire substrates using the MOCVD technique. The growth was performed using a pulsed source injection mode with triethylborane (TEB) and ammonia (NH3) with a high V/III ratio, which corresponds to the self-terminated growth mode. Two different carrier gases, H2 and Ar, were used to investigate their influence on the growth mechanism, while all the other growth parameters were kept the same. The BN films thus obtained were examined using XRR, SIMS, Raman spectroscopy, ATR spectroscopy, SEM and AFM. A difference was found in the surface roughness. The BN films grown in an H2 atmosphere had a surface roughness three times smoother than those grown in Ar. However, the main difference was brought to light by SIMS measurements. The SIMS measurements revealed that growth under an H2 flow leads to a reduction in carbon concentration by more than four orders of magnitude. It was also shown that the boron distribution in the BN film grown under an H2 flow is very uniform. It is discussed that this mechanism is related to the reactions between TEB and NH3 in the presence of H2. The elimination of carbon by using hydrogen reveals its role in BN growth, which is indeed essential.

中文翻译：

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氢在 MOCVD 生长的薄氮化硼的碳掺入和表面粗糙度中的作用

摘要 采用 MOCVD 技术在 2 英寸蓝宝石衬底上生长氮化硼薄膜。使用具有高 V/III 比的三乙基硼 (TEB) 和氨 (NH3) 的脉冲源注入模式进行生长，这对应于自终止生长模式。两种不同的载气 H2 和 Ar 用于研究它们对生长机制的影响，而所有其他生长参数保持不变。使用XRR、SIMS、拉曼光谱、ATR光谱、SEM和AFM检查由此获得的BN膜。发现表面粗糙度存在差异。在 H2 气氛中生长的 BN 薄膜的表面粗糙度是在 Ar 中生长的薄膜的三倍。然而，SIMS 测量揭示了主要差异。SIMS 测量显示，在 H2 流下的增长导致碳浓度降低四个数量级以上。还表明，在 H2 流下生长的 BN 膜中的硼分布非常均匀。讨论了这种机制与 TEB 和 NH3 在 H2 存在下的反应有关。使用氢消除碳揭示了它在 BN 生长中的作用，这确实是必不可少的。