One of the organometal halide perovskite materials, i.e. methylammonium lead bromide (MAPbBr₃), possesses interesting and incredible physicochemical properties, and shows great promising in light-emitting device. However, the poor morphology and high defect density properties of MAPbBr₃ films limit the performance of perovskite light-emitting diodes (PeLEDs). Here, high efficiency PeLEDs based on MAPbBr₃ is demonstrated by the incorporation of phenethylamine (PEA). We find that the introduction of PEA into the precursor of MAPbBr₃ reduces the grain size and increases the coverage of MAPbBr₃ films. In addition, it also passivates the surface defects of the grains, which all lead to high photoluminescence efficiency. In order to promote the charge injection into the MAPbBr₃ grains, suppress the exciton quenching at the interface of perovskite film and hole transporting layer (HTL)/electron transporting layer (ETL), the device structure of “insulator-perovskite-insulator” is employed to further improve the performance of the PeLEDs. Under optimized ratio of MA and PEA, a maximum current efficiency 9.81 cd A⁻¹ is achieved. Our work presents an facile and robust route for high performance PeLEDs.

一种有机金属卤化物钙钛矿材料，即甲基铵溴化铅（MAPbBr ₃），具有有趣而令人难以置信的理化性质，在发光器件中显示出巨大的希望。然而，MAPbBr ₃膜的不良形貌和高缺陷密度特性限制了钙钛矿发光二极管（PeLED）的性能。在此，通过并入苯乙胺（PEA）证明了基于MAPbBr _3的高效PeLED 。我们发现，将PEA引入MAPbBr ₃的前驱体可减小晶粒尺寸并增加MAPbBr ₃的覆盖率电影。另外，它还钝化了晶粒的表面缺陷，所有这些缺陷都导致高的光致发光效率。为了促进电荷注入到MAPbBr ₃晶粒中，抑制在钙钛矿膜与空穴传输层（HTL）/电子传输层（ETL）的界面处的激子猝灭，“绝缘体-钙钛矿-绝缘体”的器件结构为用于进一步改善PeLED的性能。在MA和PEA的最佳比例下，可实现最大电流效率9.81 cd A ^-1。我们的工作为高性能PeLED提供了一种简便而强大的方法。