Reversible alternation between bipolar and unipolar resistive switching in Ag/MoS2/Au structure for multilevel flexible memory†,Journal of Materials Chemistry C

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Reversible alternation between bipolar and unipolar resistive switching in Ag/MoS2/Au structure for multilevel flexible memory†
Journal of Materials Chemistry C ( IF 5.7 ) Pub Date : 2018-05-30 00:00:00 , DOI: 10.1039/c8tc01844h
Xiaoning Zhao _{1,

2,

3,

4} , Zeying Fan _{1,

2,

3,

4} , Haiyang Xu _{1,

2,

3,

4} , Zhongqiang Wang _{1,

2,

3,

4} , Jiaqi Xu _{1,

2,

3,

4} , Jiangang Ma _{1,

2,

3,

4} , Yichun Liu _{1,

2,

3,

4}

Affiliation

Reversible alternation between bipolar and unipolar resistive switching (RS) modes was observed by controlling voltage-polarity in Ag/MoS₂/Au memory on polyethylene terephthalate (PET) substrate. The temperature-dependent low-resistance-state and Raman measurement indicated that Ag and sulphur vacancy (V_s)-based conductive filaments (CFs) were responsible for these two RS modes. The two kinds of CFs had different responses under positive read voltages. Thus, a new operation scheme of multilevel memory was demonstrated in which multiple states were distinguished by CF composition rather than resistance values. The memory capacity of the cell could be further extended by adjustments in CFs’ size in each mode. The RS performance of the device did not degrade under bending conditions even over 10⁴ bending cycles, which indicated good mechanical flexibility. The present Ag/MoS₂/Au memory has promise for future high-density flexible information storage.

中文翻译：

Ag / MoS ₂ / Au结构中双极性和单极性电阻切换之间的可逆交替，用于多层柔性存储器†

通过控制聚对苯二甲酸乙二醇酯（PET）基板上的Ag / MoS ₂ / Au存储器中的电压极性，可以观察到双极性和单极性电阻切换（RS）模式之间可逆交替。温度相关的低电阻状态和拉曼测量表明，Ag和硫的空位（V _s）的导电丝（CF）负责这两种RS模式。两种CF在正读取电压下具有不同的响应。因此，展示了一种新的多级存储器操作方案，其中通过CF组成而不是电阻值来区分多个状态。通过调整每种模式下CF的大小，可以进一步扩展单元的存储容量。即使在10 ^4个弯曲周期内，该器件的RS性能在弯曲条件下也不会降低，这表明具有良好的机械柔韧性。当前的Ag / MoS ₂ / Au存储器有望用于未来的高密度灵活信息存储。

更新日期：2018-05-30

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