Epitaxial growth of composite scintillators based on Tb3Al5O12 : Ce single crystalline films and Gd3Al2.5Ga2.5O12 : Ce crystal substrates,CrystEngComm

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Epitaxial growth of composite scintillators based on Tb3Al5O12 : Ce single crystalline films and Gd3Al2.5Ga2.5O12 : Ce crystal substrates
CrystEngComm ( IF 2.6 ) Pub Date : 2018-05-30 00:00:00 , DOI: 10.1039/c8ce00536b
S. Witkiewicz-Lukaszek _{1,

2,

3,

4,

5} , V. Gorbenko _{1,

2,

3,

4} , T. Zorenko _{1,

2,

3,

4} , K. Paprocki _{1,

2,

3,

4} , O. Sidletskiy _{6,

7,

8,

9} , A. Fedorov _{7,

9,

10,

11} , R. Kucerkova _{1,

12,

13,

14} , J. A. Mares _{1,

12,

13,

14} , M. Nikl _{1,

12,

13,

14} , Yu. Zorenko _{1,

2,

3,

4}

Affiliation

This work presents our latest achievements in the development of advanced composite scintillators for simultaneous registration of α-particles and γ-quanta in mixed ionizing fluxes based on single crystalline films (SCFs) of Tb₃Al₃O₁₂ : Ce (TbAG : Ce) garnet and Gd₃Al_2.5Ga_2.5O₁₂ : Ce (GAGG : Ce) single crystal (SC) substrates using the liquid phase epitaxy (LPE) growth method from a melt-solution based on a PbO–B₂O₃ flux. The separation of the signals from the SCF and SC components of such composite scintillators can be realized by means of registration of the difference in the scintillation decay times of SCF and substrate scintillators and can be achieved at a large K = t(SCF)/t(SC) ratio, which is usually above 2. The TbAG : Ce SCFs exhibit relatively fast scintillation response under α-particle excitation with decay times of t_1/e = 344–380 ns and t_1/100 = 3130–3770 ns. Meanwhile, the scintillation response of TbAG : Ce SCFs under α-particle excitation is significantly slower in the 500–4000 ns range than that of the GAGG : Ce crystals with decay times of t_1/e = 270–280 ns and t_1/20 = 1280–1300 ns. We have found that for TbAG : Ce/GAGG : Ce composite scintillators, the optimal K ratio changes from 2.0 to 3.0 at the registration of scintillations with shaping times of 700–4000 ns. For this reason, TbAG : Ce/GAGG : Ce composite scintillators possess the best scintillation properties among all known LPE grown analogues for simultaneous registration of α-particles and γ-quanta in mixed fluxes.

中文翻译：

基于Tb ₃ Al ₅ O ₁₂ ：Ce单晶膜和Gd ₃ Al _2.5 Ga _2.5 O ₁₂ ：Ce晶体基复合闪烁体的外延生长。

这项工作展示了我们在先进复合闪烁体的开发中的最新成就，该复合闪烁体基于Tb ₃ Al ₃ O ₁₂ ：Ce（TbAG：Ce）的单晶膜（SCF）同时在混合电离通量中同时记录α粒子和γ量子。石榴石和Gd ₃ Al _2.5 Ga _2.5 O ₁₂ ：Ce（GAGG：Ce）单晶（SC）衬底，采用液相外延（LPE）生长方法从基于PbO–B ₂ O ₃的熔融溶液中提取通量。可以通过记录SCF和基板闪烁体闪烁衰减时间的差异来实现信号与此类复合闪烁体SCF和SC分量的分离，并且可以在大K = t（SCF）/ t的情况下实现（SC）比通常大于2。TbAG：Ce SCF在α粒子激发下表现出相对较快的闪烁响应，衰减时间为t _{1 / e} = 344–380 ns和t _1/100 = 3130–3770 ns。同时，在500-4000 ns范围内，α-粒子激发下TbAG：Ce SCF的闪烁响应比衰减时间为t _{1 / e}的GAGG：Ce晶体的闪烁响应慢得多。= 270–280 ns，t _1/20 = 1280–1300 ns。我们已经发现，对于TbAG：Ce / GAGG：Ce复合闪烁体，在闪烁记录时，最佳K比值从2.0变为3.0，整形时间为700-4000 ns。因此，TbAG：Ce / GAGG：Ce复合闪烁体在所有已知的LPE生长类似物中具有最佳的闪烁特性，可同时在混合助熔剂中配准α粒子和γ量子。

更新日期：2018-05-30

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