The dielectric breakdown strength of borosilicate glass was measured as a function of the length of a conducting filament in order to determine the critical energy release for the growth of a breakdown channel. The concept is similar to the experimental determination of the toughness in fracture mechanics and based on a Griffith type model for the electrical energy release rate in dielectric materials with space charge limited conductivity. By Focused-Ion-Beam-milling and Pt-deposition, up to 100 μm long conductive channels were fabricated in 163 μm thick borosilicate glass substrates. The dielectric breakdown strength of substrates with filaments longer than 30 μm could be very well described by a $\frac{1}{\sqrt{filamentlength}}$ -dependence predicted by the model Schneider, 2013. With these results for the first time a critical energy release rate for dielectric breakdown was determined being 6.30 ± 0.95 mJ/m.

测量硼硅酸盐玻璃的介电击穿强度与导电灯丝长度的关系，以便确定击穿通道生长所需的临界能量释放。该概念类似于对断裂力学中的韧性进行的实验确定，并基于格里菲斯（Griffith）型模型，用于具有空间电荷受限电导率的介电材料中的电能释放速率。通过聚焦离子束铣削和Pt沉积，在163μm厚的硼硅酸盐玻璃基板上制造了长达100μm的导电通道。细丝长于30μm的基板的介电击穿强度可以很好地描述为$\frac{\mathrm{1个}}{\sqrt{F\mathrm{一世}升\mathrm{一个}米ËñŤ升ËñGŤH}}$ 依赖关系由模型Schneider，2013年预测。利用这些结果，首次确定了介电击穿的临界能量释放速率为6.30±0.95 mJ / m。