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Populating surface-trapped electrons towards SERS enhancement of W18O49 nanowires†
Chemical Communications ( IF 4.3 ) Pub Date : 2018-05-25 00:00:00 , DOI: 10.1039/c8cc03880e
Ling-Jun Gu 1, 2, 3, 4, 5 , Chun-Lan Ma 1, 2, 3, 4, 5 , Xiao-Hua Zhang 5, 6, 7, 8, 9 , Wei Zhang 5, 8, 10, 11 , Shan Cong 5, 6, 7, 8, 9 , Zhi-Gang Zhao 5, 6, 7, 8, 9
Affiliation  

The population of surface-trapped electrons is found to be in a close relationship with the SERS performance of a nanostructured W18O49 substrate, as proved by construction of metal–semiconductor interfaces or organic–semiconductor coordination. Therefore, further improvement in the SERS performance of semiconductors could be expected by populating the surface-trapped electrons.

中文翻译:

向S 18增强W 18 O 49纳米线的表面捕获电子的迁移

已发现表面陷阱电子的数量与纳米结构的W 18 O 49衬底的SERS性能密切相关,这已通过金属-半导体界面或有机-半导体配位的构建得到证明。因此,可以期望通过填充表面俘获的电子来进一步提高半导体的SERS性能。
更新日期:2018-05-25
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