SiC materials are prime candidates for flow channel inserts in the dual coolant lithium lead blanket concept. Flow channel inserts made of SiC will be exposed to tritium from the Li transmutation, as well as to neutron and gamma radiation. Hence a critical issue for future fusion devices is to clarify hydrogen isotope behaviour in SiC under such conditions. The objective of the work presented here is to study the effect of ionizing radiation on the deuterium trapping in Reaction Bonded SiC in similar conditions as reactor materials. This effect is evaluated by studying the influence of ionizing radiation on deuterium trapping (for both implanted and loaded SiC samples). Moreover, it is investigated how deuterium trapping may be modified by displacement damage. The ionizing radiation effect on absorption has also been evaluated for samples pre-damaged by self-ion irradiation. The irradiation and implantation experiment have been carried out at the CMAM-UAM accelerator, and the Danfysik implanter and 2 MeV Van de Graaff electron accelerator at CIEMAT. Samples are analysed by thermal desorption spectroscopy and secondary ion mass spectrometry (SIMS) to clarify the mechanisms involved in the trapping processes, depending on the different experimental conditions. The results for the deuterium loaded samples indicate that absorption is increased by ionizing radiation. When samples are pre-damaged by C⁺⁴ ions, deuterium absorption is increased in the form of Si-D according to SIMS results. Furthermore, the effect of ionizing radiation after deuterium implantation is an enhancement of the deuterium released from SiC. The deuterium release observed in this case is forming hydrocarbons during irradiations.

SiC材料是双冷却液锂铅橡皮布概念中流道嵌件的主要候选材料。由SiC制成的流道插入件将因Li mut变而暴露于tri，以及中子和伽马辐射。因此，对于未来的聚变设备而言，关键的问题是弄清这种条件下SiC中的氢同位素行为。此处提出的工作目的是研究在与反应堆材料相似的条件下，电离辐射对反应键合SiC中氘捕集的影响。通过研究电离辐射对氘阱的影响（对于注入的和负载的SiC样品），可以评估这种效果。此外，研究了如何通过位移破坏来改善氘的俘获。还对通过自离子辐照预先损坏的样品评估了电离辐射对吸收的影响。辐照和注入实验已在CMAM-UAM加速器上进行，Danfysik注入机和2 MeV Van de Graaff电子加速器在CIEMAT上进行了。通过热解吸光谱和二次离子质谱（SIMS）分析样品，以根据不同的实验条件阐明捕获过程中涉及的机理。负载氘样品的结果表明，电离辐射可增加吸收。当样品被C预先损坏时 通过热解吸光谱和二次离子质谱（SIMS）对样品进行分析，以根据不同的实验条件阐明捕获过程中涉及的机理。负载氘样品的结果表明，电离辐射可增加吸收。当样品被C预先损坏时 通过热解吸光谱和二次离子质谱（SIMS）分析样品，以根据不同的实验条件阐明捕获过程中涉及的机理。负载氘样品的结果表明，电离辐射可增加吸收。当样品被C预先损坏时⁺⁴离子，根据SIMS结果，氘的吸收以Si-D的形式增加。此外，氘注入后电离辐射的作用是增强了从SiC释放出的氘。在这种情况下观察到的氘释放是在辐照过程中形成碳氢化合物。