Recent advances in flexible and stretchable electronics (FSE), a technology diverging from the conventional rigid silicon technology, have stimulated fundamental scientific and technological research efforts. FSE aims at enabling disruptive applications such as flexible displays, wearable sensors, printed RFID tags on packaging, electronics on skin/organs, and Internet-of-things as well as possibly reducing the cost of electronic device fabrication. Thus, the key materials components of electronics, the semiconductor, the dielectric, and the conductor as well as the passive (substrate, planarization, passivation, and encapsulation layers) must exhibit electrical performance and mechanical properties compatible with FSE components and products. In this review, we summarize and analyze recent advances in materials concepts as well as in thin-film fabrication techniques for high-k (or high-capacitance) gate dielectrics when integrated with FSE-compatible semiconductors such as organics, metal oxides, quantum dot arrays, carbon nanotubes, graphene, and other 2D semiconductors. Since thin-film transistors (TFTs) are the key enablers of FSE devices, we discuss TFT structures and operation mechanisms after a discussion on the needs and general requirements of gate dielectrics. Also, the advantages of high-k dielectrics over low-k ones in TFT applications were elaborated. Next, after presenting the design and properties of high-k polymers and inorganic, electrolyte, and hybrid dielectric families, we focus on the most important fabrication methodologies for their deposition as TFT gate dielectric thin films. Furthermore, we provide a detailed summary of recent progress in performance of FSE TFTs based on these high-k dielectrics, focusing primarily on emerging semiconductor types. Finally, we conclude with an outlook and challenges section.

中文翻译：

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用于新兴的柔性和可伸缩电子产品的高k栅极电介质

与传统的刚性硅技术不同的柔性和可拉伸电子学（FSE）的最新进展刺激了基础科学和技术研究的努力。FSE旨在实现颠覆性应用，例如柔性显示器，可穿戴传感器，包装上的印刷RFID标签，皮肤/器官上的电子产品以及物联网，并可能降低电子设备的制造成本。因此，电子，半导体，电介质和导体以及无源（基板，平坦化，钝化和封装层）的关键材料组件必须表现出与FSE组件和产品兼容的电性能和机械性能。在这篇评论中，与FSE兼容半导体（例如有机物，金属氧化物，量子点阵列，碳纳米管，石墨烯和其他2D半导体）集成时，k（或高电容）栅极电介质。由于薄膜晶体管（TFT）是FSE器件的关键推动力，因此在讨论栅极电介质的需求和一般要求之后，我们将讨论TFT结构和操作机制。此外，还阐述了TFT应用中高k电介质相对于低k电介质的优势。接下来，介绍了高介电常数的设计和特性聚合物和无机，电解质和混合电介质族，我们将重点放在最重要的制造方法上，以将其沉积为TFT栅极电介质薄膜。此外，我们提供了基于这些高k电介质的FSE TFT性能的最新进展的详细摘要，主要关注新兴的半导体类型。最后，我们以展望和挑战部分结束。