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Synthesis of Submillimeter‐Scale Single Crystal Stannous Sulfide Nanoplates for Visible and Near‐Infrared Photodetectors with Ultrahigh Responsivity
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2018-05-21 , DOI: 10.1002/aelm.201800154 Qiu Li 1 , Aixiang Wei 1, 2 , Jianting Lu 1 , Lili Tao 1 , Yibin Yang 1 , Dongxiang Luo 1 , Jun Liu 1 , Ye Xiao 1 , Yu Zhao 1 , Jingbo Li 1
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2018-05-21 , DOI: 10.1002/aelm.201800154 Qiu Li 1 , Aixiang Wei 1, 2 , Jianting Lu 1 , Lili Tao 1 , Yibin Yang 1 , Dongxiang Luo 1 , Jun Liu 1 , Ye Xiao 1 , Yu Zhao 1 , Jingbo Li 1
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Layered 2D semiconductors, such as graphene and transition‐metal dichalcogenides (TMDs), are receiving intensive attention owing to their great performance in electronic and optoelectronic application during the past few years. Among them, SnS has similar anisotropy to black phosphorus and high photoresponse in the near infrared range, rendering it as an ideal candidate for infrared photodetectors. In this work, large‐size (up to 330 µm) and high‐quality single‐crystalline SnS nanoplates are synthesized successfully via controlled chemical vapor deposition technique and characterized by field‐emission scanning electron microscopy, X‐ray diffraction, confocal Raman system, atomic force microscope, transmission electron microscopy, and photoluminescence spectroscopy. Photodetectors based on as‐grown SnS nanoplates are fabricated with back‐gated field effect transistors (FETs) configuration, exhibiting a high mobility of 17.1 cm2 V−1 s−1. Photodetectors based on the SnS FETs demonstrate excellent optoelectronic performance both in visible and near‐infrared spectral range. Typically, photoresponsivity of 197.7 A W−1, photoresponse time of 39 ms, and external quantum efficiency of 6.06 × 104% are exhibited under the irradiation of 405 nm laser. The wide response range and ultrahigh sensitivity make the large‐area single crystal SnS nanoplate a promising candidate for future application in optoelectronics.
中文翻译：
具有超高响应度的可见光和近红外光电探测器的亚毫米级单晶硫化亚锡纳米板的合成。
层状2D半导体，例如石墨烯和过渡金属二硫化氢（TMD），由于在过去几年中在电子和光电应用中的出色表现而受到广泛关注。其中，SnS具有与黑磷相似的各向异性，并且在近红外范围内具有高光响应性，使其成为红外光电探测器的理想候选者。在这项工作中，通过受控化学气相沉积技术成功合成了大尺寸（最大330 µm）和高质量的单晶SnS纳米板，并通过场发射扫描电子显微镜，X射线衍射，共聚焦拉曼系统，原子力显微镜，透射电子显微镜和光致发光光谱。2 V -1 s -1。基于SnS FET的光电探测器在可见光和近红外光谱范围内均表现出出色的光电性能。典型地，在405nm激光的照射下表现出197.7AW -1的光响应性，39ms的光响应时间和6.06×10 4％的外部量子效率。宽响应范围和超高灵敏度使大面积单晶SnS纳米板成为光电子未来应用的有希望的候选者。
更新日期：2018-05-21
中文翻译：
具有超高响应度的可见光和近红外光电探测器的亚毫米级单晶硫化亚锡纳米板的合成。
层状2D半导体，例如石墨烯和过渡金属二硫化氢（TMD），由于在过去几年中在电子和光电应用中的出色表现而受到广泛关注。其中，SnS具有与黑磷相似的各向异性，并且在近红外范围内具有高光响应性，使其成为红外光电探测器的理想候选者。在这项工作中，通过受控化学气相沉积技术成功合成了大尺寸（最大330 µm）和高质量的单晶SnS纳米板，并通过场发射扫描电子显微镜，X射线衍射，共聚焦拉曼系统，原子力显微镜，透射电子显微镜和光致发光光谱。2 V -1 s -1。基于SnS FET的光电探测器在可见光和近红外光谱范围内均表现出出色的光电性能。典型地，在405nm激光的照射下表现出197.7AW -1的光响应性，39ms的光响应时间和6.06×10 4％的外部量子效率。宽响应范围和超高灵敏度使大面积单晶SnS纳米板成为光电子未来应用的有希望的候选者。
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