Four soluble dialkylated tetrathienoacene (TTAR)‐based small molecular semiconductors featuring the combination of a TTAR central core, π‐conjugated spacers comprising bithiophene (bT) or thiophene (T), and with/without cyanoacrylate (CA) end‐capping moieties are synthesized and characterized. The molecule DbT‐TTAR exhibits a promising hole mobility up to 0.36 cm² V⁻¹ s⁻¹ due to the enhanced crystallinity of the microribbon‐like films. Binary blends of the p‐type DbT‐TTAR and the n‐type dicyanomethylene substituted dithienothiophene‐quinoid (DTTQ‐11) are investigated in terms of film morphology, microstructure, and organic field‐effect transistor (OFET) performance. The data indicate that as the DbT‐TTAR content in the blend film increases, the charge transport characteristics vary from unipolar (electron‐only) to ambipolar and then back to unipolar (hole‐only). With a 1:1 weight ratio of DbT‐TTAR DTTQ‐11 in the blend, well‐defined pathways for both charge carriers are achieved and resulted in ambipolar transport with high hole and electron mobilities of 0.83 and 0.37 cm² V⁻¹ s⁻¹, respectively. This study provides a viable way for tuning microstructure and charge carrier transport in small molecules and their blends to achieve high‐performance solution‐processable OFETs.

中文翻译：

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基于溶液处理的高性能四硫代噻吩基小分子共混物，用于双极性电荷传输。

合成了四种可溶的二烷基化四硫杂环丁烯（TTAR）基小分子半导体，这些半导体具有以下特征：TTAR中心核，包含联噻吩（bT）或噻吩（T）的π共轭间隔基以及具有/不具有氰基丙烯酸酯（CA）的封端基团和特点。由于微带状薄膜的结晶性增强，DbT-TTAR分子的空穴迁移率高达0.36 cm ² V ^-1 s ^-1。p型DbT-TTAR和n型二氰基亚甲基取代的二噻吩并噻吩-醌类化合物的二元混合物（DTTQ-11）从薄膜形态，微观结构和有机场效应晶体管（OFET）性能方面进行了研究。数据表明，随着共混膜中DbT-TTAR含量的增加，电荷传输特性从单极性（仅电子）变为双极性，然后又回到单极性（仅空穴）。用1：1重量比的DBT-TTAR DTTQ-11共混物中，明确定义的路径两者的载流子来实现，并导致具有0.83高的空穴和电子迁移率和0.37厘米双极传输² V ^-1小号^{- 1个}， 分别。这项研究为调整小分子及其混合物中的微结构和电荷载流子传输提供了可行的方法，以实现高性能的可溶液加工的OFET。