Using first-principles calculations, the electronic properties of SiSe monolayer under in-plane strains are studied. It is found that the band gap of SiSe monolayer is increased linearly under the tensile strains along armchair direction. The tensile strain of 7% along zigzag direction makes a transition of band gap from indirect to direct. Under the biaxial compressive strains from 0% to -5%, we found that the band gap of SiSe monolayer is decreased continuously. Moreover, the SiSe monolayer exhibits metallic behavior under the -5% biaxial compressive strain.

中文翻译：

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通过面内应变调整二维SiSe单层的电子性质

使用第一性原理计算，研究了平面内应变下SiSe单层的电子性质。发现在沿扶手椅方向的拉伸应变下，SiSe单层的带隙线性增加。沿之字形方向的7％拉伸应变使带隙从间接转变为直接。在从0％到-5％的双轴压缩应变下，我们发现SiSe单层的带隙不断减小。而且，SiSe单层在-5％的双轴压缩应变下表现出金属性能。