Abstract Copper and α-brass micropillars containing a single coherent twin boundary of controlled orientation were compressed to systematically investigate dislocation-twin boundary interactions as a function of the dislocation type and generalized stacking fault energies. For this purpose, bicrystalline micropillars in [112], [110] and [259] orientations were prepared from polycrystalline samples using focused ion beam milling in combination with custom 3D-printed sample holders. Consistent with previous findings, a vertical twin boundary neither resulted in the storage of dislocations at the interface nor in an increase of the sample strength when compressed in the [112] direction. However, the interface proved to be a strong obstacle for the non-screw dislocations promoted by the [259] orientation. In this case, dislocation storage – evidenced by large pile-ups – lead to a strong hardening of the specimens. The strengthening contribution of the interface was further affected by the stacking fault energy of the material. While this could be related to the different permeability of the interface, it is more likely the result of a change in cross-slip frequency within the sample volume.

中文翻译：

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微柱压缩研究的层错能和位错特性对相干孪晶边界滑移传递的影响

摘要 压缩包含受控取向的单个相干孪晶界的铜和 α-黄铜微柱，以系统地研究位错-孪晶界相互作用作为位错类型和广义堆垛层错能的函数。为此，[112]、[110] 和 [259] 方向的双晶微柱是使用聚焦离子束铣削结合定制的 3D 打印样品支架从多晶样品制备的。与之前的发现一致，垂直孪晶边界既不会导致界面处位错的存储，也不会导致在 [112] 方向上压缩时样品强度的增加。然而，界面被证明是[259]取向促进的非螺旋位错的强大障碍。在这种情况下，位错存储 - 由大量堆积证明 - 导致试样强烈硬化。界面的强化贡献进一步受到材料层错能的影响。虽然这可能与界面的不同渗透率有关，但更有可能是样品体积内交叉滑移频率变化的结果。