A crystallochemical framework is proposed based on electronegativity difference (e_n) and tolerance factor (t) to optimise the BiMeO₃ dopants and therefore the piezoelectric and high-field strain response in BaTiO₃-BiFeO₃ based ceramics. Compositions in the series 0.05Bi(Me)O₃-0.25BaTiO₃-0.7BiFeO₃ (BMe-BT-BF, Me: Y, Sc_1/2Y_1/2, Mg_2/3Nb_1/3, Sc, Zn_2/3Nb_1/3, Zn_1/2Ti_1/2, Ga, and Al) were fabricated using solid state synthesis and furnace cooled. Scanning electron microscopy and X-ray diffraction revealed that only Bi(Mg_2/3Nb_1/3)O₃ and BiScO₃ dopants, which lie in a narrow range of e_n vs. t, form homogeneous ceramics, free from secondary phases reflected in their superior piezoelectric coefficients (d₃₃ ∼145 pC/N). All other BiMeO₃ additions exhibited either secondary phases (Y) and/or promoted a two-phase perovskite matrix (Zn, Ga and Al). The promising initial properties of BiScO₃ doped compositions prompted further studies on 0.05BiScO₃-(0.95-x)BaTiO₃-(x)BiFeO₃ (BS-BT-BF, x = 0.55, 0.60, 0.625, 0.65, and 0.70) ceramics. As x increased the structure changed from predominantly pseudocubic to rhombohedral, resulting in a transition from a relaxor-like to ferroelectric response. The largest d₃₃^* (465 pm/V) was achieved for x = 0.625 under 5 kV/mm at the crossover from relaxor to ferroelectric behaviour. BS-BT-BF with x = 0.625 showed >0.3% strain under 6 kV/mm up to 175 °C, demonstrating its potential for actuator applications.

提出了一种基于电负性差（e _n）和公差因子（t）的晶体化学框架，以优化BiMeO ₃掺杂剂，从而优化BaTiO ₃ -BiFeO ₃基陶瓷的压电和高场应变响应。系列0.05Bi（Me）O ₃ -0.25BaTiO ₃ -0.7BiFeO ₃（B Me -BT-BF，Me：Y，Sc _1/2 Y _1/2，Mg _2/3 Nb _1/3，Sc ，Zn _2/3 Nb _1/3，Zn _1/2 Ti_1/2，Ga和Al）是使用固态合成方法制备的，并进行炉冷。扫描电子显微镜和X-射线衍射表明，仅铋（镁_2/3的Nb _1/3）O ₃和BISCO _3种掺杂剂，它位于一个窄的范围内的ë _Ñ与吨，形成均匀陶瓷，从二次相自由反映在其优越的压电系数（d ₃₃〜145 pC / N）。所有其他BiMeO ₃添加剂均显示出第二相（Y）和/或促进了两相钙钛矿基质（Zn，Ga和Al）。BiScO ₃的有前途的初始特性掺杂的组合物促使人们进一步研究0.05BiScO _3-（0.95- x）BaTiO _3-（x）BiFeO ₃（BS-BT-BF，x = 0.55，0.60，0.625，0.65和0.70）陶瓷。随着x的增加，结构从主要为伪立方变为菱形，导致从弛豫样转变为铁电响应。 在从松弛器到铁电行为的交点下，在5 kV / mm下x = 0.625时，最大的d ₃₃ ^*（465 pm / V）达到了。x  = 0.625的BS-BT-BF在6 kV / mm下高达175°C的温度下显示> 0.3％的应变，表明其在执行器应用中的潜力。