Abstract Two-dimensional (2D) hexagonal boron nitride (h-BN) is a fascinating material for variety of applications such as graphene-based devices, transparent/bendable electronics, and deep ultraviolet emitters. However, its technological applications are contingent upon tunable and scalable growth. Here, we demonstrate reproducible and tunable growth of high-quality h-BN crystals on Cu via chemical vapor deposition (CVD) through a precise control of the BN precursor’s flow during growth. We present synthesis of both epitaxially-grown triangular flakes and large-area continuous films with tunable thickness ranging from monolayer to 11-layer thick. Using a combination of electron microscopy imaging, spectroscopy, and diffraction analysis, we thoroughly study morphology, thickness, chemistry, grain size, and atomic structure of the grown h-BN crystals. This study could pave the way for developing controlled and reproducible growth of high-quality h-BN crystals with tunable thickness and morphology.

中文翻译：

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二维六方氮化硼晶体的可控生长和原子尺度表征

摘要 二维 (2D) 六方氮化硼 (h-BN) 是一种引人入胜的材料，可用于各种应用，例如基于石墨烯的器件、透明/可弯曲电子产品和深紫外发射器。然而，其技术应用取决于可调和可扩展的增长。在这里，我们通过在生长过程中精确控制 BN 前体的流动，证明了通过化学气相沉积 (CVD) 在 Cu 上可重复和可调节地生长高质量 h-BN 晶体。我们展示了外延生长的三角形薄片和大面积连续薄膜的合成，可调厚度范围从单层到 11 层厚。结合使用电子显微镜成像、光谱学和衍射分析，我们彻底研究形态、厚度、化学、晶粒尺寸、和生长的 h-BN 晶体的原子结构。这项研究可以为开发具有可调厚度和形态的高质量 h-BN 晶体的可控和可重复生长铺平道路。