Abstract Hafnium oxide based ferroelectric (FE) and antiferroelectric (AFE) thin films show great potentials in memory and energy related applications, while their successes in commercially available devices depend strongly on detailed characterization and deep understanding of the endurance properties of the materials. In this work, the bipolar field cycling behavior has been investigated in detail for FE and AFE-like Si-doped HfO2 films. Their apparent differences in fatigue and breakdown resistance are interpreted by the modified switching-induced charge-injection model. Referring to the first-order phase transition theory, we summarize and predict the evolution of polarization switching characteristic for FE, AFE-like and AFE Si-doped HfO2 thin films stressed with bipolar field cycling. Additionally, several approaches are suggested to improve the endurance properties of ferroelectric HfO2-based thin films in terms of fabrication process and material design.

中文翻译：

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掺硅氧化铪铁电和类反铁电薄膜的耐久性：比较研究和预测

摘要 基于氧化铪的铁电 (FE) 和反铁电 (AFE) 薄膜在存储器和能源相关应用中显示出巨大的潜力，而它们在商用设备中的成功在很大程度上取决于对材料耐久性特性的详细表征和深入理解。在这项工作中，已经详细研究了 FE 和类似 AFE 的 Si 掺杂 HfO2 薄膜的双极场循环行为。它们在疲劳和击穿电阻方面的明显差异可以通过修改后的开关诱导电荷注入模型来解释。参考一阶相变理论，我们总结并预测了 FE、AFE 类和 AFE Si 掺杂 HfO2 薄膜在双极场循环应力下的极化开关特性的演变。此外，