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Self-Aligned Nanopore Formed on a SiO2 Pyramidal Membrane by a Multipulse Dielectric Breakdown Method
The Journal of Physical Chemistry C ( IF 3.3 ) Pub Date : 2018-05-14 00:00:00 , DOI: 10.1021/acs.jpcc.8b01472 Yifan Wang 1 , Qi Chen 1 , Tao Deng 2 , Zewen Liu 1
The Journal of Physical Chemistry C ( IF 3.3 ) Pub Date : 2018-05-14 00:00:00 , DOI: 10.1021/acs.jpcc.8b01472 Yifan Wang 1 , Qi Chen 1 , Tao Deng 2 , Zewen Liu 1
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Dielectric breakdown method is an efficient and convenient approach to fabricate nanopores on dielectric membranes. However, this method shows weak control over the position of the pore. In this paper, we propose to fabricate a self-aligned nanopore on thermal oxidized SiO2 pyramidal film by the multipulse dielectric breakdown method. The realization of self-alignment is based on two points: one is the self-enhanced electric field at the vertex area of the pyramidal membrane; the other is the optimized thickness distribution (i.e., the vertex area exhibits the thinnest thickness) given by thermal oxidation process. Assisted by COMSOL simulation and calculation methods, nanopores with estimated sizes ranging from 5.2 to 47 nm were obtained and located precisely at the vertex of the pyramidal membrane. Similar to the nanopore on planar membrane, the ion current rectification characteristics of nanopores on pyramidal membrane showed strong dependence on the electrolyte concentration, pore size, and applied voltage. Furthermore, the DNA molecular detection capability of the nanopores prepared in this work was also examined, and the experimental results showed comparable performance with nanopores reported in other studies.
中文翻译：
多脉冲介电击穿法在SiO 2金字塔形膜上形成自对准纳米孔
介电击穿方法是在介电膜上制造纳米孔的一种有效且方便的方法。但是，该方法显示出对孔的位置的控制较弱。在本文中，我们建议在热氧化的SiO 2上制备自对准纳米孔锥膜采用多脉冲介质击穿法。自对准的实现基于两点：一是锥体膜顶点区域的自增强电场。另一个是通过热氧化工艺获得的最佳厚度分布（即，顶点区域显示出最薄的厚度）。在COMSOL模拟和计算方法的辅助下，获得了估计尺寸范围为5.2至47 nm的纳米孔并将其精确地定位在锥体膜的顶点。类似于平面膜上的纳米孔，金字塔形膜上的纳米孔的离子电流整流特性显示出对电解质浓度，孔径和施加电压的强烈依赖性。此外，
更新日期：2018-05-14
中文翻译：
多脉冲介电击穿法在SiO 2金字塔形膜上形成自对准纳米孔
介电击穿方法是在介电膜上制造纳米孔的一种有效且方便的方法。但是，该方法显示出对孔的位置的控制较弱。在本文中，我们建议在热氧化的SiO 2上制备自对准纳米孔锥膜采用多脉冲介质击穿法。自对准的实现基于两点：一是锥体膜顶点区域的自增强电场。另一个是通过热氧化工艺获得的最佳厚度分布（即，顶点区域显示出最薄的厚度）。在COMSOL模拟和计算方法的辅助下，获得了估计尺寸范围为5.2至47 nm的纳米孔并将其精确地定位在锥体膜的顶点。类似于平面膜上的纳米孔，金字塔形膜上的纳米孔的离子电流整流特性显示出对电解质浓度，孔径和施加电压的强烈依赖性。此外，
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