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Mussel‐Inspired Polydopamine Coating for Flexible Ternary Resistive Memory
Chemistry - An Asian Journal ( IF 3.5 ) Pub Date : 2018-06-19 , DOI: 10.1002/asia.201800634 Yong‐Yan Zhao 1 , Xue‐Feng Cheng 1 , Wen Hu Qian 1 , Jin Zhou 1 , Wu‐Ji Sun 1 , Xiang Hou 1 , Jing‐Hui He 1 , Hua Li 1 , Qing‐Feng Xu 1 , Na‐Jun Li 1 , Dong‐Yun Chen 1 , Jian‐Mei Lu 1
Chemistry - An Asian Journal ( IF 3.5 ) Pub Date : 2018-06-19 , DOI: 10.1002/asia.201800634 Yong‐Yan Zhao 1 , Xue‐Feng Cheng 1 , Wen Hu Qian 1 , Jin Zhou 1 , Wu‐Ji Sun 1 , Xiang Hou 1 , Jing‐Hui He 1 , Hua Li 1 , Qing‐Feng Xu 1 , Na‐Jun Li 1 , Dong‐Yun Chen 1 , Jian‐Mei Lu 1
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In recent years, numerous organic molecules and polymers carrying various functional groups were synthesized and used in fabrication of wearable electronic devices. Compared to previous materials that suffer from poisonousness, stiffness and complex film fabrication, we circumvent above matters by taking advantage of mussel‐inspired polydopamine as our active material to realize resistive random access memories (RRAMs). Polydopamine thin films were grown on indium tin oxide glass catalyzed by Cu2SO4/H2O2 and characterized by Fourier infrared spectroscopy (FT‐IR), UV/Vis spectroscopy and scanning electron microscopy. The Al/Polydopamine film/ITO devices possess ternary memory behavior with good ternary device yield with two threshold voltages around 1.50 V and 3.50 V, long data retention over 104 s of continuous reading or 104 pulse reading. The two resistance switchings are attributed to defects functioning as charge traps and the formation of conductive filaments. A flexible device based on Al/polydopamine film/ITO/polyethylene terephthalate retains its ternary memory behavior after being bent with a bending radius of 1.54 cm and bending cycles up to 5000, demonstrating good compatibility and flexibility of polydopamine.
中文翻译：
贻贝启发性的聚多巴胺涂层，用于灵活的三元电阻记忆
近年来，合成了许多带有各种官能团的有机分子和聚合物，并将其用于可穿戴电子设备的制造中。与以前的有毒，高刚度和复杂薄膜制造的材料相比，我们利用贻贝启发性聚多巴胺作为我们的活性材料来实现电阻式随机存取存储器（RRAM），从而规避了上述问题。Cu 2 SO 4 / H 2 O 2催化在氧化铟锡玻璃上生长聚多巴胺薄膜并通过傅立叶红外光谱（FT-IR），紫外/可见光谱和扫描电子显微镜进行表征。Al / Polydopamine膜/ ITO器件具有三元存储特性，具有良好的三元器件产量，两个阈值电压约为1.50 V和3.50 V，在10 4 s的连续读取或10 4脉冲读取中具有较长的数据保留时间。两次电阻转换归因于缺陷，其起着电荷陷阱的作用，并形成了导电细丝。基于Al /聚多巴胺薄膜/ ITO /聚对苯二甲酸乙二酯的柔性器件在以1.54 cm的弯曲半径弯曲并弯曲至5000次后仍保持其三元记忆性能，这表明聚多巴胺具有良好的相容性和柔韧性。
更新日期：2018-06-19
中文翻译：
贻贝启发性的聚多巴胺涂层，用于灵活的三元电阻记忆
近年来，合成了许多带有各种官能团的有机分子和聚合物，并将其用于可穿戴电子设备的制造中。与以前的有毒，高刚度和复杂薄膜制造的材料相比，我们利用贻贝启发性聚多巴胺作为我们的活性材料来实现电阻式随机存取存储器（RRAM），从而规避了上述问题。Cu 2 SO 4 / H 2 O 2催化在氧化铟锡玻璃上生长聚多巴胺薄膜并通过傅立叶红外光谱（FT-IR），紫外/可见光谱和扫描电子显微镜进行表征。Al / Polydopamine膜/ ITO器件具有三元存储特性，具有良好的三元器件产量，两个阈值电压约为1.50 V和3.50 V，在10 4 s的连续读取或10 4脉冲读取中具有较长的数据保留时间。两次电阻转换归因于缺陷，其起着电荷陷阱的作用，并形成了导电细丝。基于Al /聚多巴胺薄膜/ ITO /聚对苯二甲酸乙二酯的柔性器件在以1.54 cm的弯曲半径弯曲并弯曲至5000次后仍保持其三元记忆性能，这表明聚多巴胺具有良好的相容性和柔韧性。
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