Abstract Indium selenide (InSe), which is one of the most promising layered III-chalcogenide compounds, is an attractive material for applications in infrared detection, solar energy conversion and high mobility transfer devices etc. In this work, InSe crystals were grown from the liquid phase using the temperature difference method under controlled vapor pressure (TDM-CVP) at a growth temperature of 582 °C, which is lower than that of the melt used in the Bridgman-Stockbarger technique. X-ray diffraction (XRD) and Raman spectroscopy results indicate that the grown crystal was γ-InSe with R3m space group symmetry. Photoluminescence measurements were carried out to determine the optical properties of the grown crystal, from which it was confirmed that the sample had a direct bandgap of 1.32 eV, an indirect bandgap of 1.28 eV and an exciton binding energy of 20 meV.

中文翻译：

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在受控蒸汽压下通过温差法生长的结晶 InSe 的低温液相生长

摘要 硒化铟 (InSe) 是最有前途的层状 III-硫族化合物之一，是一种有吸引力的材料，可用于红外检测、太阳能转换和高迁移率转移器件等领域。液相在受控蒸汽压下使用温差法 (TDM-CVP)，生长温度为 582 °C，低于 Bridgman-Stockbarger 技术中使用的熔体。X 射线衍射 (XRD) 和拉曼光谱结果表明生长的晶体为具有 R3m 空间群对称性的 γ-InSe。进行光致发光测量以确定生长晶体的光学特性，由此证实样品的直接带隙为 1.32 eV，间接带隙为 1。