Implementation of Low‐Power Electronic Devices Using Solution‐Processed Tantalum Pentoxide Dielectric,Advanced Functional Materials

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Implementation of Low‐Power Electronic Devices Using Solution‐Processed Tantalum Pentoxide Dielectric
Advanced Functional Materials ( IF 18.5 ) Pub Date : 2018-05-07 , DOI: 10.1002/adfm.201704215
Jungwoo Heo ₁ , Song Yi Park ₂ , Jae Won Kim ₂ , Seyeong Song ₂ , Yung Jin Yoon ₂ , Jaeki Jeong ₂ , Hyungsu Jang ₂ , Kang Taek Lee ₂ , Jung Hwa Seo ₃ , Bright Walker ₄ , Jin Young Kim _{1,

2}

Affiliation

The development of solution‐processed field effect transistors (FETs) based on organic and hybrid materials over the past two decades has demonstrated the incredible potential in these technologies. However, solution processed FETs generally require impracticably high voltages to switch on and off, which precludes their application in low‐power devices and prevent their integration with standard logic circuitry. Here, a universal and environmentally benign solution‐processing method for the preparation of Ta₂O₅, HfO₂ and ZrO₂ amorphous dielectric thin films is demonstrated. High mobility CdS FETs are fabricated on such high‐κ dielectric substrates entirely via solution‐processing. The highest mobility, 2.97 cm² V⁻¹ s⁻¹ is achieved in the device with Ta₂O₅ dielectric with a low threshold voltage of 1.00 V, which is higher than the mobility of the reference CdS FET with SiO₂ dielectric with an order of magnitude decrease in threshold voltage as well. Because these FETs can be operated at less than 5 V, they may potentially be integrated with existing logic and display circuitry without significant signal amplification. This report demonstrates high‐mobility FETs using solution‐processed Ta₂O₅ dielectrics with drastically reduced power consumption; ≈95% reduction compared to that of the device with a conventional SiO₂ gate dielectric.

中文翻译：

使用溶液处理的五氧化二钽电介质实现低功率电子设备

在过去的二十年中，基于有机和混合材料的溶液处理场效应晶体管（FET）的开发证明了这些技术的巨大潜力。但是，经过溶液处理的FET通常需要不切实际的高压才能打开和关闭，这使其无法在低功耗设备中使用，并妨碍了它们与标准逻辑电路的集成。这里，展示了一种用于制备Ta ₂ O ₅，HfO ₂和ZrO ₂非晶态电介质薄膜的通用且环境友好的溶液处理方法。高迁移率CdS FET完全通过溶液处理在这种高κ介电基片上制造。最高的流动性，2.97 cm ²在具有Ta ₂ O ₅电介质且阈值电压低1.00 V的器件中实现V ^-1 s ^-1，该阈值高于具有SiO ₂电介质且阈值电压降低一个数量级的参考CdS FET的迁移率也一样由于这些FET的工作电压低于5 V，因此它们可能会与现有的逻辑和显示电路集成在一起，而不会产生明显的信号放大。该报告展示了采用溶液处理的Ta ₂ O ₅电介质的高迁移率FET ，其功耗大大降低了。与具有传统SiO ₂栅极电介质的器件相比，降低了约95％。

更新日期：2018-05-07

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