A Strategy for Architecture Design of Crystalline Perovskite Light‐Emitting Diodes with High Performance,Advanced Materials

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A Strategy for Architecture Design of Crystalline Perovskite Light‐Emitting Diodes with High Performance
Advanced Materials ( IF 27.4 ) Pub Date : 2018-05-07 , DOI: 10.1002/adma.201800251
Yifei Shi ₁ , Wen Wu ₁ , Hua Dong ₁ , Guangru Li ₂ , Kai Xi ₃ , Giorgio Divitini ₃ , Chenxin Ran ₁ , Fang Yuan ₁ , Min Zhang ₁ , Bo Jiao ₁ , Xun Hou ₁ , Zhaoxin Wu _{1,

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Affiliation

All present designs of perovskite light‐emitting diodes (PeLEDs) stem from polymer light‐emitting diodes (PLEDs) or perovskite solar cells. The optimal structure of PeLEDs can be predicted to differ from PLEDs due to the different fluorescence dynamics and crystallization between perovskite and polymer. Herein, a new design strategy and conception is introduced, “insulator–perovskite–insulator” (IPI) architecture tailored to PeLEDs. As examples of FAPbBr₃ and MAPbBr₃, it is experimentally shown that the IPI structure effectively induces charge carriers into perovskite crystals, blocks leakage currents via pinholes in the perovskite film, and avoids exciton quenching simultaneously. Consequently, as for FAPbBr₃, a 30‐fold enhancement in the current efficiency of IPI‐structured PeLEDs compared to a control device with poly(3,4ethylenedioxythiophene):poly(styrene sulfonate) as hole‐injection layer is achieved—from 0.64 to 20.3 cd A⁻¹—while the external quantum efficiency is increased from 0.174% to 5.53%. As the example of CsPbBr₃, compared with the control device, both current efficiency and lifetime of IPI‐structured PeLEDs are improved from 1.42 and 4 h to 9.86 cd A⁻¹ and 96 h. This IPI architecture represents a novel strategy for the design of light‐emitting didoes based on various perovskites with high efficiencies and stabilities.

中文翻译：

高性能钙钛矿型发光二极管的建筑设计策略

钙钛矿发光二极管（PeLED）的所有现有设计都源自聚合物发光二极管（PLED）或钙钛矿太阳能电池。可以预测，由于钙钛矿和聚合物之间的荧光动力学和结晶不同，PeLED的最佳结构与PLED有所不同。本文介绍了一种新的设计策略和概念，即针对PeLED的“绝缘体-钙钛矿-绝缘体”（IPI）架构。作为FAPbBr ₃和MAPbBr _3的实例，实验表明IPI结构有效地将电荷载流子带入钙钛矿晶体中，通过钙钛矿膜中的针孔阻止泄漏电流，并同时避免了激子猝灭。因此，关于FAPbBr ₃，一个30倍的增强在IPI结构PeLEDs的电流效率与用聚（3,4ethylenedioxythiophene）的控制装置：聚（苯乙烯磺酸）作为空穴注入层，实现-从0.64至20.3光盘^-1 -而外部量子效率从0.174％提高到5.53％。作为CsPbBr ₃的例子，与控制设备相比，IPI结构的PeLED的电流效率和寿命从1.42和4 h提高到9.86 cd A ^-1和96 h。这种IPI体系结构代表了一种基于各种钙钛矿的高效，稳定的发光二极管设计的新颖策略。

更新日期：2018-05-07

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