Abstract High quality In0.30Ga0.70As layers on GaAs substrates were obtained using compositional undulating step-graded Ga1-xInxP (x = 0.48–0.78) buffers grown by metal-organic chemical vapor deposition. The density of threading dislocation is about 4.0 × 106 cm−2 and the root-mean-square roughness is only 5.20 nm, which is much better than those grown on the conventional step-graded metamorphic buffer. On one hand, the reversed GaInP layers reduce the distribution imbalance of α dislocations between the (1 1 1) and (−1 −1 1) slip planes, which promote dislocation glide. On the other hand, the inserted tensile strained GaInP layers change the direction of dislocation glide and facilitate dislocation annihilations, which effectively confine the threading dislocations in the buffer. Overall, this work provides a promising way to obtain virtual substrates for the achievement of desired metamorphic devices.

中文翻译：

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提高质量的 In 0.30 Ga 0.70 As 层生长在 GaAs 衬底上，使用起伏阶梯梯度 GaInP 缓冲液

摘要 使用通过金属有机化学气相沉积生长的成分起伏阶梯梯度 Ga1-xInxP (x = 0.48–0.78) 缓冲液，在 GaAs 衬底上获得了高质量的 In0.30Ga0.70As 层。穿透位错的密度约为 4.0 × 106 cm-2，均方根粗糙度仅为 5.20 nm，远优于传统阶梯变质缓冲层上生长的位错。一方面，反转的 GaInP 层减少了 (1 1 1) 和 (-1 -1 1) 滑移面之间 α 位错的分布不平衡，这促进了位错滑动。另一方面，插入的拉伸应变 GaInP 层改变了位错滑动的方向并促进了位错湮灭，从而有效地限制了缓冲中的穿透位错。全面的，