High thermoelectric performance of n-type Bi2Te2.7Se0.3via nanostructure engineering†,Journal of Materials Chemistry A

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High thermoelectric performance of n-type Bi2Te2.7Se0.3via nanostructure engineering†
Journal of Materials Chemistry A ( IF 10.7 ) Pub Date : 2018-05-11 00:00:00 , DOI: 10.1039/c8ta00525g
D. Li _{1,

2,

3,

4,

5} , J. M. Li _{1,

2,

3,

4,

5} , J. C. Li _{1,

2,

3,

4,

5} , Y. S. Wang _{1,

2,

3,

4,

5} , J. Zhang _{1,

2,

3,

4,

5} , X. Y. Qin _{1,

2,

3,

4,

5} , Y. Cao _{5,

6,

7,

8} , Y. S. Li _{5,

6,

7,

8} , G. D. Tang _{5,

6,

7,

8}

Affiliation

BiSbTe has been realized as an ideal p-type thermoelectric material near room temperature; however, its commercial applications are largely restricted by its n-type counterpart that exhibits relatively inferior thermoelectric performance. In this work, n-type BiTeSe based composites Bi₂Te_2.7Se_0.3–f InSb (0 ≤ f ≤ 2.5 vol%) are prepared by a ball milling and spark plasma sintering method. A record-high ZT value of ∼1.22 is achieved at 323 K for Bi₂Te_2.7Se_0.3–1.5 vol% InSb composites. This significant enhancement in thermoelectric performance is attributed to the incorporation of nanostructured InSb into the Bi₂Te_2.7Se_0.3 matrix, which can simultaneously modulate the electrical and thermal transport. InSb with high carrier mobility precipitated in the matrix can strengthen interface scattering at the phase boundaries, which can effectively scatter the heat-carrying phonons and thus yield an extremely low lattice thermal conductivity, while the high power factor is maintained. As a result, a maximum ZT of 1.22 is obtained. The average ZT in the temperature range of 300–425 K for Bi₂Te_2.7Se_0.3–1.5 vol% InSb is 1.14, which is at least 15% larger than that of previously reported values. Our results demonstrate that for n-type bismuth-telluride-based alloys, imbedding nanostructured phases with a high carrier mobility is an effective strategy for enhancing the performance of the state-of-the-art thermoelectric systems.

中文翻译：

通过纳米结构工程获得n型Bi ₂ Te _2.7 Se _0.3的高热电性能†

BiSbTe已被实现为接近室温的理想p型热电材料。但是，其商业应用在很大程度上受到其n型热电性能相对较差的限制。在这项工作中，基于n型BiTeSe复合材料的Bi ₂特_2.7硒_0.3 - ˚F的InSb（0≤ ˚F ≤2.5体积％）通过球磨和放电等离子烧结法来制备。Bi ₂ Te _2.7 Se _0.3在323 K时达到创纪录的约1.22的ZT值–1.5％（体积）的InSb复合材料。热电性能的显着提高归因于将纳米结构化的InSb掺入Bi ₂ Te _2.7 Se _0.3基体中，该基体可以同时调节电传输和热传输。在基质中析出的具有高载流子迁移率的InSb可以增强界面在相界处的散射，从而可以有效地散射载热声子，从而产生极低的晶格热导率，同时保持高功率因数。结果，获得的最大ZT为1.22。Bi ₂ Te _2.7 Se _0.3在300–425 K的温度范围内的平均ZTInSb的–1.5 vol％为1.14，至少比以前报告的值大15％。我们的结果表明，对于n型基于碲化铋的合金，以高载流子迁移率嵌入纳米结构相是提高最新热电系统性能的有效策略。

更新日期：2018-05-11

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