For enhancing the dielectric and electromagnetic wave (EMW) absorption ability, SiC-Sc₂Si₂O₇ ceramics were fabricated by introducing SiC into porous Sc₂Si₂O₇ ceramics through precursor infiltration and pyrolysis (PIP). The Sc₂Si₂O₇ powders were synthesized by sol-gel method and Sc₂Si₂O₇ ceramics were prepared by pressure-less sintering. The results indicate that SiC nano-crystalline and turbostratic carbon derived from polycarbosilane distributed uniformly in electrically insulating matrix (Sc₂Si₂O₇ matrix), resulting in tunable dielectric permittivity and EMW absorbing properties. Additionally, the content of C-rich SiC can be efficiently adjusted by PIP times. The SiC-Sc₂Si₂O₇ ceramic showed excellent microwave absorption performance when the content of C-rich SiC was 25.3 wt.%. A minimum reflection coefficient of −51.3 dB was obtained at 9.56 GHz with the specimen thickness of 3.6 mm. The effective absorption bandwidth covered 3.6 GHz (from 8.7 to 12.3 GHz). The excellent microwave absorption abilities of SiC-Sc₂Si₂O₇ ceramic were mainly attributed to uniform distribution of C-rich SiC in Sc₂Si₂O₇ matrix. The special structure can improve the impedance matching and enhance microwave absorption performance. Moreover, the defects, interfaces and conductive network existed in the materials, which can synergistically improve the EMW absorption ability.

为了增强电介质和电磁波（EMW）的吸收能力，通过将SiC通过前体渗透和热解（PIP）引入多孔Sc ₂ Si ₂ O ₇陶瓷中来制造SiC-Sc ₂ Si ₂ O ₇陶瓷。通过溶胶-凝胶法合成了Sc ₂ Si ₂ O ₇粉末，并通过无压烧结制备了Sc ₂ Si ₂ O ₇陶瓷。结果表明，聚碳硅烷衍生的SiC纳米晶和透层碳均匀分布在电绝缘基体（Sc ₂ Si₂ O ₇矩阵），从而产生可调节的介电常数和EMW吸收特性。另外，可以通过PIP时间有效地调节富含C的SiC的含量。当富C的SiC的含量为25.3重量％时，SiC-Sc ₂ Si ₂ O ₇陶瓷表现出优异的微波吸收性能。在9.56 GHz处获得的最小反射系数为-51.3 dB，样品厚度为3.6 mm。有效吸收带宽覆盖3.6 GHz（从8.7到12.3 GHz）。SiC-Sc ₂ Si ₂ O ₇陶瓷优异的微波吸收能力主要归因于富碳SiC在Sc ₂ Si中的均匀分布₂ O ₇矩阵。这种特殊的结构可以改善阻抗匹配并增强微波吸收性能。而且，材料中存在缺陷，界面和导电网络，可以协同提高EMW的吸收能力。