A polymer/silica hybrid integration add-drop filter based on a grating-assisted contradirectional coupler fabricated through simple and low-cost contact lithography is proposed. First, the structure pattern of the add-drop filter was formed in the lower silica cladding by contact lithography and inductively coupled plasma (ICP) etching. Then an SU-8 film was fabricated on top of it by a spin-coating method, and an inverted-rib waveguide structure was formed. Next, the slab layer of the inverted-rib waveguide was removed by ICP etching. We observe a rejection band with an extinction ratio of 13 dB and a 3 dB bandwidth of 0.6 nm at a wavelength of 1509.4 nm from the through port, and a passband with a side-mode suppression ratio of 12 dB and a 3 dB bandwidth of 0.5 nm at a wavelength of 1509.4 nm from the drop port. The shift of the passband with a temperature over the range of 25–55°C is approximately 4.8 nm. This temperature dependence exhibits an average slope of $-0.16\mathrm{nm}/°\mathrm{C}$.

中文翻译：

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基于光栅辅助对向耦合器的聚合物/二氧化硅混合集成分插滤波器

提出了一种基于光栅辅助对向耦合器的聚合物/二氧化硅混合集成分插滤波器，该滤波器是通过简单且低成本的接触光刻技术制造的。首先，通过接触光刻和感应耦合等离子体（ICP）蚀刻，在下部二氧化硅覆层中形成分插式滤光片的结构图案。然后，通过旋涂法在其顶部制作SU-8膜，并形成倒肋式波导结构。接下来，通过ICP蚀刻去除倒肋波导的平板层。我们在距通孔1509.4 nm的波长处观察到一个消光比为13 dB的抑制带和一个0.6 nm的3 dB带宽，以及一个通带，其侧模抑制比为12 dB的通带和3 dB带宽。距离出入口1509.4 nm的波长为0.5 nm。温度在25–55°C范围内时，通带的位移约为4.8 nm。这种温度依赖性显示出平均斜率为$-0.16\mathrm{纳米}/°\mathrm{C}$。