Excitonic Energy Transfer within InP/ZnS Quantum Dot Langmuir-Blodgett Assemblies.,The Journal of Physical Chemistry C

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Excitonic Energy Transfer within InP/ZnS Quantum Dot Langmuir-Blodgett Assemblies.
The Journal of Physical Chemistry C ( IF 3.3 ) Pub Date : 2018-05-07 , DOI: 10.1021/acs.jpcc.8b00744
Houman Bahmani Jalali ₁ , Rustamzhon Melikov ₂ , Sadra Sadeghi ₃ , Sedat Nizamoglu _{1,

2,

3}

Affiliation

Interparticle energy transfer offers great promise to a diverse range of applications ranging from artificial solar energy harvesting to nanoscale rulers in biology. Here, we assembled InP/ZnS core/shell quantum dot monolayers via the Langmuir-Blodgett technique and studied the effect of ZnS shell thickness on the excitonic energy transfer within these core/shell quantum dots. Three types of InP-based core/shell quantum dot Langmuir-Blodgett assemblies with different ZnS shell thicknesses were assembled. The structural and optical properties of colloidal quantum dots reveal the successful multiple ZnS shell growth, and atomic force microscopy studies show the smoothness of the assembled monolayers. Time-resolved photoluminescence (PL) and fluorescence lifetime imaging microscopy (FLIM) studies of the thick-shell QD monolayer reveal narrower lifetime distribution in comparison with the thin-shell QD monolayer. The interparticle excitonic energy transfer was studied by spectrally resolved PL traces, and higher energy transfer was observed for the thin-shell InP/1ZnS QD monolayer. Finally, we calculated the average exciton energy and indicated that the energy transfer induced exciton energy shift decreased significantly from 95 to 27 meV after multiple ZnS shell growth.

中文翻译：

InP / ZnS量子点Langmuir-Blodgett组件内的激子能量转移。

粒子间能量转移为从人工太阳能收集到生物学中的纳米尺的各种应用提供了广阔的前景。在这里，我们通过Langmuir-Blodgett技术组装了InP / ZnS核/壳量子点单层，并研究了ZnS壳厚度对这些核/壳量子点内激子能量转移的影响。组装了三种类型的具有不同ZnS壳厚度的InP基核/壳量子点Langmuir-Blodgett组件。胶体量子点的结构和光学性质显示成功的多个ZnS壳生长，并且原子力显微镜研究显示组装的单分子层的光滑度。厚壳QD单层的时间分辨光致发光（PL）和荧光寿命成像显微镜（FLIM）研究表明，与薄壳QD单层相比，寿命分布更窄。通过光谱解析的PL迹线研究了粒子间的激子能量转移，并且观察到薄壳InP / 1ZnS QD单层的更高的能量转移。最后，我们计算了平均激子能量，并表明在多次ZnS壳生长之后，能量转移引起的激子能量转移从95 meV显着降低。

更新日期：2018-05-07

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