当前位置：
X-MOL 学术
›
J. Phys. Chem. C
›
论文详情
Our official English website, www.x-mol.net, welcomes your
feedback! (Note: you will need to create a separate account there.)
Rectification and Amplification of Ionic Current in Planar Graphene/Graphene-Oxide Junctions: An Electrochemical Diode and Transistor
The Journal of Physical Chemistry C ( IF 3.3 ) Pub Date : 2018-05-07 00:00:00 , DOI: 10.1021/acs.jpcc.8b01717 Sourav Kanti Jana 1, 2 , Sangam Banerjee 2 , Sayan Bayan 2 , Harish Reddy Inta 1 , Venkataramanan Mahalingam 1
The Journal of Physical Chemistry C ( IF 3.3 ) Pub Date : 2018-05-07 00:00:00 , DOI: 10.1021/acs.jpcc.8b01717 Sourav Kanti Jana 1, 2 , Sangam Banerjee 2 , Sayan Bayan 2 , Harish Reddy Inta 1 , Venkataramanan Mahalingam 1
Affiliation
|
This manuscript describes the fabrication of a two-dimensional planar junction formed with graphene oxide (GO) and selective electrochemically reduced graphene oxides (ERGOs), which exhibits rectification of ionic current in the presence of electrolyte. Moreover, amplification of the ionic current has also been demonstrated in planar transistor configuration constituted with two back-to-back planar GO–ERGO junctions. Structural modification-induced change in the electronic property of ERGO samples compared to GO is observed, and Mott–Schottky analysis confirms that the GO and ERGO are of n-type and p-type conductivities, respectively, which determine interfacial charge transfer from either electrode to electrolyte or vice versa. Thus, the ionic current is controlled by the modulation of the interfacial charge concentration by external voltage applied across the junction sample. Hence, this device exhibits bias-dependent unidirectional ion current, presumably through electrochemical oxidation of OH– ions on ERGO (p side) and reduction of H+ ions on GO (n side) interface, which confirms the formation of an electrochemical p–n junction diode.
中文翻译：
平面石墨烯/石墨烯-氧化物结中的离子电流的整流和放大：电化学二极管和晶体管
该手稿描述了由氧化石墨烯（GO）和选择性电化学还原的氧化石墨烯（ERGO）形成的二维平面结的制造，该结在电解质存在下表现出离子电流的整流作用。此外，在由两个背对背的平面GO–ERGO结构成的平面晶体管配置中，也已证明了离子电流的放大。与GO相比，观察到了结构修饰引起的ERGO样品的电子性质变化，Mott–Schottky分析证实GO和ERGO分别具有n型和p型电导率，这决定了从任一电极的界面电荷转移电解液，反之亦然。因此，离子电流通过交界样品两端施加的外部电压对界面电荷浓度的调制来控制。因此，该器件表现出与偏压有关的单向离子电流，大概是通过OH的电化学氧化来实现的。– ERGO上的离子（p侧）和GO上的H +离子（n侧）被还原，这证实了电化学p–n结二极管的形成。
更新日期：2018-05-07
中文翻译：
平面石墨烯/石墨烯-氧化物结中的离子电流的整流和放大：电化学二极管和晶体管
该手稿描述了由氧化石墨烯（GO）和选择性电化学还原的氧化石墨烯（ERGO）形成的二维平面结的制造，该结在电解质存在下表现出离子电流的整流作用。此外，在由两个背对背的平面GO–ERGO结构成的平面晶体管配置中，也已证明了离子电流的放大。与GO相比，观察到了结构修饰引起的ERGO样品的电子性质变化，Mott–Schottky分析证实GO和ERGO分别具有n型和p型电导率，这决定了从任一电极的界面电荷转移电解液，反之亦然。因此，离子电流通过交界样品两端施加的外部电压对界面电荷浓度的调制来控制。因此，该器件表现出与偏压有关的单向离子电流，大概是通过OH的电化学氧化来实现的。– ERGO上的离子（p侧）和GO上的H +离子（n侧）被还原，这证实了电化学p–n结二极管的形成。
京公网安备 11010802027423号