3-mercapto-1-propanesulfonate (MPS) accelerates the copper deposition rate through making the reduction of cupric ions into cuprous ions be kinetically favorable in the two-step, single-electron-transfer route. The depolarization ability of MPS shows a strong dependence on current density and its accelerating characteristic declines with the current density. The fading depolarization phenomenon is a critical reason for the void formation under the high current density plating condition although employing higher current densities to shorten the plating time for copper damascene process is the objective to push forward. Consequently, the polarizing species suppressing the deposition rate at the corner and sidewall of the vias should be strong enough to prevent copper from growing too fast, and the concentration of depolarizing additives may also need to increase to promote the growth rate at the bottom. Careful reconsideration of additives should be done to achieve the void-free filling at high current density electrodeposition.

3-巯基-1-丙烷磺酸盐（MPS）通过在两步单电子转移途径中使铜离子还原为亚铜离子具有动力学上的优势，从而加快了铜的沉积速率。MPS的去极化能力显示出对电流密度的强烈依赖性，其加速特性随电流密度而下降。衰落的去极化现象是在高电流密度电镀条件下形成空隙的关键原因，尽管为实现铜镶嵌工艺采用更高的电流密度来缩短电镀时间是一个目标。因此，抑制通孔拐角和侧壁沉积速率的极化物质应足够坚固，以防止铜生长过快，并且去极化添加剂的浓度可能还需要增加以促进底部的生长速率。应仔细考虑添加剂，以在高电流密度电沉积时实现无空隙填充。