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Influence of the electron buffer layer on the photovoltaic performance of planar Sb2(SxSe1‐x)3 solar cells
Progress in Photovoltaics ( IF 8.0 ) Pub Date : 2018-04-06 , DOI: 10.1002/pip.3007
Oscar Andrés Jaramillo-Quintero 1 , Marina Elizabeth Rincón 1 , Geovanni Vásquez-García 1 , P. K. Nair 1
Affiliation  

Appropriate selection of electron buffer layer and understanding its impact on the photo‐generated charge transfer dynamics at the interfaces are critical to enhance the efficiency of solar cells. By optimizing a multilayer electron buffer composed of CdS thin film deposited on TiO2 compact layer, we obtained a power conversion efficiency (PCE) of 5.47% for a planar solar cell of Sb2(SxSe1‐x)3 absorber. The PCE was significantly enhanced in the photovoltaic parameters of planar solar cells fabricated with single‐layer configuration: for example, PCE of 3.99% and 0.79% were obtained when either CdS or TiO2, respectively, were used. Surface photovoltage spectroscopy, transient photovoltage, and electrochemical impedance spectroscopy analyses indicated that the PCE improvement can be ascribed to a combination of 2 factors: (i) better separation and transfer of the photo‐excited free charge, provided by the beneficial energy level alignment between TiO2 and CdS layers, and (ii) sulfur passivation upon incorporation of CdS in a multilayer configuration causing a reduction in the trap states at the interface with Sb2(SxSe1‐x)3.

中文翻译:

电子缓冲层对平面Sb2(SxSe1-x)3太阳能电池光伏性能的影响

电子缓冲层并理解其对界面处的光生电荷转移动力学影响的适当的选择是关键的,以提高太阳能电池的效率。通过优化由沉积在TiO 2致密层上的CdS薄膜组成的多层电子缓冲器,我们获得了Sb 2(S x Se 1- x3吸收体的平面太阳能电池的功率转换效率(PCE)为5.47%。在单层构造的平面太阳能电池的光伏参数中,PCE显着提高:例如,当CdS或TiO 2时,PCE分别为3.99%和0.79%分别使用。表面光电压光谱,瞬态光电压和电化学阻抗光谱分析表明,PCE的改善可归因于以下两个因素的组合:(i)更好的光激发自由电荷的分离和转移,这是由于两者之间的有益能级对齐所致TiO 2和CdS层,以及(ii)以多层结构掺入CdS时的硫钝化,导致与Sb 2(S x Se 1- x3的界面处的陷阱态降低。
更新日期:2018-04-06
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