Accelerated tests were used to study potential‐induced degradation (PID) in photovoltaic (PV) modules fabricated from silicon heterojunction (SHJ) solar cells containing tungsten‐doped indium oxide (IWO) transparent conductive films on both sides of the cells and a rear‐side emitter. A negative bias of −1000 V was applied to a module with respect to the cover glass surface in a chamber maintained at 85°C, which significantly reduced the cell's short‐circuit current density (J_sc) within several days. Based on dark current density‐voltage and external quantum efficiency measurements, the reduction in the J_sc was attributed to optical losses rather than carrier recombination. X‐ray absorption fine structure spectroscopy showed the formation of metallic indium (In) in the IWO layers of a degraded cell, which suggests that the root cause of the optical loss was a darkening of the front IWO layers caused by the precipitation of metallic In. In extremely severe PID tests, the SHJ PV modules exhibited not only a further reduction in the J_sc but also a moderate reduction in the open‐circuit voltage (V_oc). These J_sc and V_oc reductions were probably caused by sodium being introduced into the base region of the cells. A comparison of the PID test results of the SHJ PV modules with those of other types of PV modules indicates that SHJ PV modules have a relatively high resistance to PID. As a module with an ionomer encapsulant exhibited little degradation, their high resistances to PID may be further improved by using encapsulants with high electrical resistances.

中文翻译：

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硅异质结光伏电池组件中电势降解的综合研究

加速测试用于研究由硅异质结（SHJ）太阳能电池制成的光伏（PV）组件中的电势退化（PID），该太阳能电池在电池的两面都包含掺钨的氧化铟（IWO）透明导电膜，并且在背面侧面发射器。在保持在85°C的室内将相对于盖玻片表面的模块负负电压-1000 V施加，这可在几天内显着降低电池的短路电流密度（J _sc）。根据暗电流密度-电压和外部量子效率测量，J _sc的减小归因于光损耗而不是载流子重组。X射线吸收精细结构光谱表明，在降解电池的IWO层中形成了金属铟（In），这表明光损失的根本原因是由于金属In的沉淀导致前IWO层变暗。 。在极其严格的PID测试中，SHJ PV模块不仅表现出J _sc的进一步降低，而且表现出开路电压（V _oc）的适度降低。这些J _sc和V _oc减少可能是由于将钠引入细胞的基础区域引起的。SHJ PV模块的PID测试结果与其他类型的PV模块的PID测试结果的比较表明，SHJ PV模块具有相对较高的PID抗性。由于具有离聚物密封剂的模块几乎没有降解，因此可以通过使用具有高电阻的密封剂来进一步改善其对PID的高电阻。