Tin diselenide (SnSe₂) has been recently investigated as an alternative layered metal dichalcogenide due to its unique electrical and optoelectronics properties. Although there are several reports on the deposition of layered crystalline SnSe₂ films by chemical and physical methods, synthesis methods like pulsed laser deposition (PLD) are not reported. An attractive feature of PLD is that it can be used to grow 2D films over large areas. In this report, a deposition process to grow stoichiometric SnSe₂ on different substrates such as single crystals (Sapphire) and amorphous oxides (SiO₂ and HfO₂) is reported. A detailed process flow for the growth of 2D SnSe₂ at temperatures of 300 °C is presented, which is substantially lower than temperatures used in chemical vapor deposition and molecular beam epitaxy. The 2D SnSe₂ films exhibit a mobility of ≈4.0 cm² V⁻¹ s⁻¹, and are successfully used to demonstrate SnSe₂/p‐Si heterojunction diodes. The diodes show I _on/I _off ratios of 10³–10⁴ with a turn on voltage of <0.5 V, and ideality factors of 1.2–1.4, depending on the SnSe₂ film growth conditions.

中文翻译：

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异质结二极管的分层SnSe2的低温沉积

由于其独特的电气和光电特性，最近已研究了二硒化锡（SnSe ₂）作为替代层状金属二卤化硅。尽管有关于通过化学和物理方法沉积层状SnSe ₂薄膜的报道，但没有报道诸如脉冲激光沉积（PLD）的合成方法。PLD的一个吸引人的功能是，它可以用于在大面积上生长2D胶片。在该报告中，报道了一种在不同衬底（例如单晶（蓝宝石）和非晶氧化物（SiO ₂和HfO ₂））上生长化学计量SnSe ₂的沉积工艺。2D SnSe ₂生长的详细工艺流程给出的温度为300°C，大大低于化学气相沉积和分子束外延中使用的温度。二维SnSe ₂薄膜的迁移率约为≈4.0 cm ² V ^-1 s ^-1，已成功用于演示SnSe ₂ / p-Si异质结二极管。根据SnSe ₂薄膜的生长条件，二极管的I _on / I _off比为10 ³ –10 ⁴，导通电压<0.5 V，理想因子为1.2–1.4 。