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Wavelength Selective Photodetectors Integrated on a Single Composition‐Graded Semiconductor Nanowire
Advanced Optical Materials ( IF 8.0 ) Pub Date : 2018-04-03 , DOI: 10.1002/adom.201800293 Xuelu Hu 1 , Huawei Liu 1 , Xiao Wang 1 , Xuehong Zhang 1 , Zhengping Shan 1 , Weihao Zheng 1 , Honglai Li 1 , Xiaoxia Wang 1 , Xiaoli Zhu 1 , Ying Jiang 1 , Qinglin Zhang 1 , Xiujuan Zhuang 1 , Anlian Pan 1
Advanced Optical Materials ( IF 8.0 ) Pub Date : 2018-04-03 , DOI: 10.1002/adom.201800293 Xuelu Hu 1 , Huawei Liu 1 , Xiao Wang 1 , Xuehong Zhang 1 , Zhengping Shan 1 , Weihao Zheng 1 , Honglai Li 1 , Xiaoxia Wang 1 , Xiaoli Zhu 1 , Ying Jiang 1 , Qinglin Zhang 1 , Xiujuan Zhuang 1 , Anlian Pan 1
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Nanoscale wavelength sensitive photodetectors based on single nanostructures are of significance for realizing future integrated optoelectronic devices. In this work, wavelength selective photodetectors integrated on a single composition‐graded CdSxSe1−x nanowire are realized. The photodetectors show an obvious illumination wavelength related rectifying effect, which can be ascribed to the graded composition along the wire. By spatially resolved photocurrent imaging, it is shown that the photoresponse of composition‐graded photodetectors is not restricted to the near contact regions, but can be extended to the whole nanowire due to the active optical waveguide to the narrow bandgap contact. Furthermore, by fabricating multielectrodes at different sections of the composition‐graded nanowire, multi‐photodetectors with tunable wavelength response ranges and selective rectified ratio at different wavelengths are realized. This work provides a deeper understanding of the dynamics of photogenerated carriers in bandgap‐engineered nanostructure photodetectors and opens the path to promising potential applications in integrated photonic and optoelectronic devices.
中文翻译：
集成在单一成分渐变半导体纳米线上的波长选择光电探测器
基于单个纳米结构的纳米级波长敏感光电探测器对于实现未来的集成光电器件具有重要意义。在这项工作中，将波长选择性光电探测器集成在单个成分分级的CdS x Se 1- x上纳米线得以实现。光电探测器显示出明显的与照明波长有关的整流效果，这可归因于沿导线的渐变成分。通过空间分辨光电流成像，表明成分分级光电探测器的光响应不限于近接触区，而是由于有源光波导对窄带隙接触而可以扩展到整个纳米线。此外，通过在组成渐变纳米线的不同部分制造多电极，可以实现具有可调波长响应范围和不同波长选择性整流比的多光电探测器。
更新日期：2018-04-03
中文翻译：
集成在单一成分渐变半导体纳米线上的波长选择光电探测器
基于单个纳米结构的纳米级波长敏感光电探测器对于实现未来的集成光电器件具有重要意义。在这项工作中，将波长选择性光电探测器集成在单个成分分级的CdS x Se 1- x上纳米线得以实现。光电探测器显示出明显的与照明波长有关的整流效果，这可归因于沿导线的渐变成分。通过空间分辨光电流成像，表明成分分级光电探测器的光响应不限于近接触区，而是由于有源光波导对窄带隙接触而可以扩展到整个纳米线。此外，通过在组成渐变纳米线的不同部分制造多电极，可以实现具有可调波长响应范围和不同波长选择性整流比的多光电探测器。
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