This work explores a nontrivial temperature behavior of the carriers concentration, which governs the conductance of the graphene channel on ferroelectric substrate with domain walls that is a basic element for field effect transistors of new generation. We revealed the transition from a single to double antiferroelectric-like hysteresis loop of the concentration voltage dependence that happens with the temperature increase and then exist in a wide temperature range (350 – 500) K. We have shown that the double loops of polarization and concentration can have irregular shape that remains irregular as long as the computation takes place, and the voltage position of the different features (jumps, secondary maxima, etc) changes from one period to another, leading to the impression of quasi-chaotic behavior. It appeared that these effects originate from the nonlinear screening of ferroelectric polarization by graphene carriers, as well as it is conditioned by the temperature evolution of the domain structure kinetics in ferroelectric substrate. The nonlinearity rules the voltage behavior of polarization screening by graphene 2D-layer and at the same time induces the motion of separated domain walls accompanied by the motion of p-n junction along the graphene channel. Since the domain walls structure, period and kinetics can be controlled by changing the temperature, we concluded that the considered nano-structures based on graphene-on-ferroelectric are promising for the fabrication of new generation of modulators based on the graphene p-n junctions.

这项工作探索了载流子浓度的非平凡的温度行为，该行为控制着具有畴壁的铁电衬底上的石墨烯沟道的电导，这是新一代场效应晶体管的基本元件。我们揭示了随着温度的升高，浓度电压依赖性从单一的反铁电样磁滞回线转变为双重的磁滞回线，然后在宽温度范围（350 – 500）K中存在。集中可以具有不规则形状，只要进行计算就可以保持不规则形状，并且不同特征（跳跃，二次最大值等）的电压位置从一个周期变化到另一个周期，从而产生准混沌行为的印象。似乎这些效应源自石墨烯载流子对铁电极化的非线性筛选，并且受铁电基体中畴结构动力学的温度演化所调节。非线性决定了石墨烯2D层极化屏蔽的电压行为，同时引发了分离的畴壁的运动以及pn结沿石墨烯通道的运动。由于可以通过改变温度来控制畴壁的结构，周期和动力学，因此我们得出结论，认为基于铁电石墨烯的纳米结构有望用于制造基于石墨烯pn结的新一代调制器。以及它是受铁电基体中畴结构动力学的温度演化影响的。非线性决定了石墨烯2D层极化屏蔽的电压行为，同时引发了分离的畴壁的运动以及pn结沿石墨烯通道的运动。由于可以通过改变温度来控制畴壁的结构，周期和动力学，因此我们得出结论，认为基于铁电石墨烯的纳米结构有望用于制造基于石墨烯pn结的新一代调制器。以及它是受铁电基体中畴结构动力学的温度演化所调节的。非线性决定了石墨烯2D层极化屏蔽的电压行为，同时引发了分离的畴壁的运动以及pn结沿石墨烯通道的运动。由于可以通过改变温度来控制畴壁的结构，周期和动力学，因此我们得出结论，认为基于铁电石墨烯的纳米结构有望用于制造基于石墨烯pn结的新一代调制器。非线性决定了石墨烯2D层极化屏蔽的电压行为，同时引发了分离的畴壁的运动以及pn结沿石墨烯通道的运动。由于可以通过改变温度来控制畴壁的结构，周期和动力学，因此我们得出结论，认为基于铁电石墨烯的纳米结构有望用于制造基于石墨烯pn结的新一代调制器。非线性决定了石墨烯2D层极化屏蔽的电压行为，同时引发了分离的畴壁的运动以及pn结沿石墨烯通道的运动。由于可以通过改变温度来控制畴壁的结构，周期和动力学，因此我们得出结论，认为基于铁电石墨烯的纳米结构有望用于制造基于石墨烯pn结的新一代调制器。