Electrically pumped lasers directly grown on silicon are key devices interfacing silicon microelectronics and photonics. We report here, for the first time, to the best of our knowledge, an electrically pumped, room-temperature, continuous-wave (CW) and single-mode distributed feedback laser array fabricated in InAs/GaAs quantum-dot gain material epitaxially grown on silicon. CW threshold currents as low as 12 mA and single-mode side mode suppression ratios as high as 50 dB have been achieved from individual devices in the array. The laser array, compatible with state-of-the-art coarse wavelength division multiplexing (CWDM) systems, has a well-aligned channel spacing of $20\pm 0.2\mathrm{nm}$ and exhibits a record wavelength covering range of 100 nm, the full span of the O-band. These results indicate that, for the first time, to the best of our knowledge, the performance of lasers epitaxially grown on silicon is elevated to a point approaching real-world CWDM applications, demonstrating the great potential of this technology.

中文翻译：

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硅上的单片量子点分布式反馈激光器阵列

直接生长在硅上的电泵浦激光器是与硅微电子学和光子学相连接的关键设备。据我们所知，这是我首次报告外延生长的InAs / GaAs量子点增益材料制造的电泵浦，室温，连续波（CW）和单模分布式反馈激光阵列在硅上。通过阵列中的各个器件，可实现低至12 mA的CW阈值电流和高至50 dB的单模侧模抑制比。与最新技术的粗波分复用（CWDM）系统兼容的激光阵列具有良好的对准通道间隔$20\pm 0.2\mathrm{纳米}$并展示了创纪录的波长覆盖范围，即100纳米，即O波段的整个跨度。这些结果表明，就我们所知，这首次使在硅上外延生长的激光器的性能提高到了接近实际CWDM应用的水平，证明了该技术的巨大潜力。