Lanthanide Yb/Er co-doped semiconductor layered WSe2 nanosheets with near-infrared luminescence at telecommunication wavelengths,Nanoscale

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Lanthanide Yb/Er co-doped semiconductor layered WSe2 nanosheets with near-infrared luminescence at telecommunication wavelengths
Nanoscale ( IF 5.8 ) Pub Date : 2018-04-25 00:00:00 , DOI: 10.1039/c8nr01139g
Gongxun Bai _{1,

2,

3,

4} , Zhibin Yang _{1,

2,

3,

4} , Huihong Lin _{1,

2,

3,

4} , Wenjing Jie _{1,

2,

3,

4} , Jianhua Hao _{1,

2,

3,

4}

Affiliation

Atomically thin layers of transition metal dichalcogenides (TMDs) have recently drawn great attention. However, doping strategies and controlled synthesis for wafer-scale TMDs are still in their early stages, greatly hindering the construction of devices and further basic studies. In this work, we develop the fast deposition of wafer-scale layered lanthanide ion Yb/Er co-doped WSe₂ using pulsed laser deposition. WSe₂ nanosheets were chosen as the host, while Yb³⁺ and Er³⁺ ions served as the sensitizer and activator, respectively. The obtained Yb/Er co-doped WSe₂ layers exhibit good uniformity and high crystallinity with highly textured features. Under the excitation of a diode laser at 980 nm, down-conversion emission is observed at around 1540 nm, assigned to the emission transition between the ⁴I_13/2 and ⁴I_15/2 states of Er³⁺. Considering the significance of 1540 nm luminescence in the application of photonic technologies, this observation in the WSe₂:Yb/Er nanosheets down to the monolayer provides a new opportunity for developing photonic devices at the 2D limit. Our work not only offers a general method to prepare wafer-scale lanthanide doped TMDs, but also to widely modulate the luminescence of atomically layered TMDs by introducing lanthanide ions.

中文翻译：

镧系元素Yb / Er共掺杂半导体层WSe ₂纳米片，在电信波长下具有近红外发光

原子过渡金属二硫化碳（TMDs）的原子薄层最近引起了极大的关注。但是，晶圆级TMD的掺杂策略和受控合成仍处于早期阶段，极大地阻碍了器件的构造和进一步的基础研究。在这项工作中，我们开发了使用脉冲激光沉积技术快速沉积晶圆级分层镧系元素离子Yb / Er共掺杂WSe _2的方法。选择WSe ₂纳米片作为主体，而Yb ³⁺和Er ³⁺离子分别用作敏化剂和活化剂。获得的Yb / Er共掺杂WSe ₂层表现出良好的均匀性和高结晶度，并具有高度纹理化的特征。在980 nm的二极管激光器的激发下，在1540 nm处观察到下转换发射，这_归因于Er ³⁺的⁴ I _13/2和⁴ I _15/2状态之间的发射跃迁。考虑到1540 nm发光在光子技术应用中的重要性，在WSe _2中的观察：Yb / Er纳米片直至单层，为在2D极限条件下开发光子器件提供了新的机会。我们的工作不仅提供制备晶片级掺杂镧系元素的TMD的通用方法，而且还通过引入镧系元素离子广泛地调节原子层状TMD的发光。

更新日期：2018-04-25

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