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Proximity-induced magnetism and an anomalous Hall effect in Bi2Se3/LaCoO3: a topological insulator/ferromagnetic insulator thin film heterostructure†
Nanoscale ( IF 5.8 ) Pub Date : 2018-04-24 00:00:00 , DOI: 10.1039/c8nr02083c Shanna Zhu 1, 2, 3, 4, 5 , Dechao Meng 5, 6, 7, 8, 9 , Genhao Liang 5, 6, 7, 8 , Gang Shi 1, 2, 3, 4, 5 , Peng Zhao 1, 2, 3, 4, 5 , Peng Cheng 1, 2, 3, 4, 5 , Yongqing Li 1, 2, 3, 4, 5 , Xiaofang Zhai 5, 6, 7, 8, 10 , Yalin Lu 5, 6, 7, 8, 10 , Lan Chen 1, 2, 3, 4, 5 , Kehui Wu 1, 2, 3, 4, 5
Nanoscale ( IF 5.8 ) Pub Date : 2018-04-24 00:00:00 , DOI: 10.1039/c8nr02083c Shanna Zhu 1, 2, 3, 4, 5 , Dechao Meng 5, 6, 7, 8, 9 , Genhao Liang 5, 6, 7, 8 , Gang Shi 1, 2, 3, 4, 5 , Peng Zhao 1, 2, 3, 4, 5 , Peng Cheng 1, 2, 3, 4, 5 , Yongqing Li 1, 2, 3, 4, 5 , Xiaofang Zhai 5, 6, 7, 8, 10 , Yalin Lu 5, 6, 7, 8, 10 , Lan Chen 1, 2, 3, 4, 5 , Kehui Wu 1, 2, 3, 4, 5
Affiliation
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Inducing magnetism in a topological insulator (TI) by exchange coupling with a ferromagnetic insulator (FMI) will break the time-reversal symmetry of topological surface states, offering possibilities to realize several predicted novel magneto-electric effects. Seeking suitable FMI materials is crucial for the coupling of heterojunctions, and yet is challenging as well and only a few kinds have been explored. In this report, we introduce epitaxial LaCoO3 thin films on a SrTiO3 substrate, which is an insulating ferromagnet with a Curie temperature of TC ∼ 85 K, to be combined with TIs for proximity coupling. Thin films of the prototype topological insulator, Bi2Se3, are successfully grown onto the (001) surface of LaCoO3/SrTiO3, forming a high-quality TI/FMI heterostructure with a sharp interface. The magnetic and transport measurements manifest the emergence of a ferromagnetic phase in Bi2Se3 films, with additional induced moments and a suppressed weak antilocalization effect, while preserving the carrier mobility of the intrinsic Bi2Se3 films at the same time. Moreover, a signal of an anomalous Hall effect is observed and persists up to temperatures above 100 K, paving the way towards spintronic device applications.
中文翻译：
Bi 2 Se 3 / LaCoO 3中的邻近感应磁性和异常霍尔效应：拓扑绝缘体/铁磁绝缘体薄膜异质结构†
通过与铁磁绝缘体（FMI）交换耦合在拓扑绝缘体（TI）中感应磁性，将打破拓扑表面状态的时间反转对称性，为实现几种预计的新型磁电效应提供了可能性。寻找合适的FMI材料对于异质结的耦合至关重要，但也具有挑战性，因此仅探索了几种。在本报告中，我们介绍外延LaCoO 3一个的SrTiO上的薄膜3基板，它是一种绝缘铁具有一个居里温度Ť Ç〜85 K，用TI的组合，用于接近耦合。原型拓扑绝缘体Bi 2 Se 3的薄膜，成功地生长在LaCoO 3 / SrTiO 3的（001）表面上，形成具有清晰界面的高质量TI / FMI异质结构。磁和输运测量结果表明，Bi 2 Se 3薄膜中出现了铁磁相，具有附加的感应矩和抑制的弱抗局部化作用，同时保留了本征Bi 2 Se 3薄膜的载流子迁移率。此外，观察到异常霍尔效应的信号并持续到100 K以上的温度，为自旋电子器件的应用铺平了道路。
更新日期：2018-04-24
中文翻译：
Bi 2 Se 3 / LaCoO 3中的邻近感应磁性和异常霍尔效应：拓扑绝缘体/铁磁绝缘体薄膜异质结构†
通过与铁磁绝缘体（FMI）交换耦合在拓扑绝缘体（TI）中感应磁性，将打破拓扑表面状态的时间反转对称性，为实现几种预计的新型磁电效应提供了可能性。寻找合适的FMI材料对于异质结的耦合至关重要，但也具有挑战性，因此仅探索了几种。在本报告中，我们介绍外延LaCoO 3一个的SrTiO上的薄膜3基板，它是一种绝缘铁具有一个居里温度Ť Ç〜85 K，用TI的组合，用于接近耦合。原型拓扑绝缘体Bi 2 Se 3的薄膜，成功地生长在LaCoO 3 / SrTiO 3的（001）表面上，形成具有清晰界面的高质量TI / FMI异质结构。磁和输运测量结果表明，Bi 2 Se 3薄膜中出现了铁磁相，具有附加的感应矩和抑制的弱抗局部化作用，同时保留了本征Bi 2 Se 3薄膜的载流子迁移率。此外，观察到异常霍尔效应的信号并持续到100 K以上的温度，为自旋电子器件的应用铺平了道路。
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