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Atomic Layer Deposition of the Metal Pyrites FeS2, CoS2, and NiS2
Angewandte Chemie International Edition ( IF 16.1 ) Pub Date : 2018-04-19 , DOI: 10.1002/anie.201803092 Zheng Guo 1 , Xinwei Wang 1
Angewandte Chemie International Edition ( IF 16.1 ) Pub Date : 2018-04-19 , DOI: 10.1002/anie.201803092 Zheng Guo 1 , Xinwei Wang 1
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Atomic layer deposition (ALD) of the pyrite‐type metal disulfides FeS2, CoS2, and NiS2 is reported for the first time. The deposition processes use iron, cobalt, and nickel amidinate compounds as the corresponding metal precursors and the H2S plasma as the sulfur source. All the processes are demonstrated to follow ideal self‐limiting ALD growth behavior to produce fairly pure, smooth, well‐crystallized, stoichiometric pyrite FeS2, CoS2, and NiS2 films. By these processes, the FeS2, CoS2, and NiS2 films can also be uniformly and conformally deposited into deep narrow trenches with aspect ratios as high as 10:1, which thereby highlights the broad and promising applicability of these ALD processes for conformal film coatings on complex high‐aspect‐ratio 3D architectures in general.
中文翻译：
金属黄铁矿FeS2，CoS2和NiS2的原子层沉积
黄铁矿型金属二硫化物FeS 2，CoS 2和NiS 2的原子层沉积（ALD）首次报道。沉积过程使用铁，钴和a基镍化合物作为相应的金属前体，并使用H 2 S等离子体作为硫源。已证明所有工艺均遵循理想的自限ALD生长行为，以生产出相当纯净，光滑，结晶良好的化学计量黄铁矿FeS 2，CoS 2和NiS 2膜。通过这些过程，FeS 2，CoS 2和NiS 2 薄膜还可以均匀和共形地沉积在深宽比高达10：1的深沟槽中，从而突出显示了这些ALD工艺对于一般高纵横比3D体系结构上的共形薄膜涂层的广泛和广阔的应用前景。
更新日期：2018-04-19
中文翻译：
金属黄铁矿FeS2，CoS2和NiS2的原子层沉积
黄铁矿型金属二硫化物FeS 2，CoS 2和NiS 2的原子层沉积（ALD）首次报道。沉积过程使用铁，钴和a基镍化合物作为相应的金属前体，并使用H 2 S等离子体作为硫源。已证明所有工艺均遵循理想的自限ALD生长行为，以生产出相当纯净，光滑，结晶良好的化学计量黄铁矿FeS 2，CoS 2和NiS 2膜。通过这些过程，FeS 2，CoS 2和NiS 2 薄膜还可以均匀和共形地沉积在深宽比高达10：1的深沟槽中，从而突出显示了这些ALD工艺对于一般高纵横比3D体系结构上的共形薄膜涂层的广泛和广阔的应用前景。
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