Contact resistance reduction of carbon nanotube via through O2 plasma post-synthesis treatment,Journal of Materials Chemistry C

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Contact resistance reduction of carbon nanotube via through O2 plasma post-synthesis treatment
Journal of Materials Chemistry C ( IF 5.7 ) Pub Date : 2018-04-19 00:00:00 , DOI: 10.1039/c8tc00770e
Suwen Li _{1,

2,

3,

4} , Yanghui Liu _{1,

2,

3,

4} , Shaolin Zhou _{5,

6,

7,

8} , Changjian Zhou _{5,

6,

7,

8} , Mansun Chan _{1,

2,

3,

4}

Affiliation

The cause of high contact resistance between carbon nanotube (CNT) filled vias and metal electrodes is studied. Contamination due to the chemical–mechanical polishing (CMP) process, which damages the sp² bonds at the end of the CNTs, is found to be the main cause. An alternative oxygen plasma etching process is proposed to preserve the sp² bonds at the CNT tips during the via planarization process. The improved properties of the CNT tips, with more sp² bonds and fewer oxygen-containing groups, have been demonstrated using X-ray photoelectron spectroscopy (XPS). Based on the findings, a new CNT via integration process is designed, which includes selective CNT growth inside the via and O₂ plasma planarization. A low contact resistance of 1.83 μΩ cm² is demonstrated.

中文翻译：

通过O ₂等离子体后合成处理降低碳纳米管的接触电阻

研究了填充碳纳米管（CNT）的通孔与金属电极之间高接触电阻的原因。人们发现，化学-机械抛光（CMP）工艺造成的污染是造成碳纳米管末端sp ²键损坏的主要原因。提出了另一种氧等离子体刻蚀工艺，以在通孔平面化工艺期间保留CNT尖端的sp ²键。使用X射线光电子能谱（XPS）证明了具有更多sp ²键和更少含氧基团的CNT尖端的性能得到改善。基于这些发现，设计了一种新的CNT通孔集成工艺，该工艺包括在通孔和O ₂内部选择性生长CNT。等离子体平面化。证明了1.83μΩcm ^2的低接触电阻。

更新日期：2018-04-19

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