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Fabrication of air-stable, transparent Cu grid electrodes by etching through a PVA-based protecting layer patterned using a screen mesh†
RSC Advances ( IF 3.9 ) Pub Date : 2018-04-19 00:00:00 , DOI: 10.1039/c7ra11966f H Tokuhisa 1 , S Tsukamoto 1 , T Nobeshima 1 , N Yamamoto 1
RSC Advances ( IF 3.9 ) Pub Date : 2018-04-19 00:00:00 , DOI: 10.1039/c7ra11966f H Tokuhisa 1 , S Tsukamoto 1 , T Nobeshima 1 , N Yamamoto 1
Affiliation
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As an alternative to conventional indium-tin-oxide (ITO) electrodes, a transparent Cu grid electrode was fabricated by etching a sputtered Cu on a flexible polyethylene naphthalate film through a polyvinyl alcohol (PVA)-based protecting layer. The masking pattern of the PVA-based polymer on the Cu was generated by evaporation of an aqueous solution containing PVA-based polymers using a screen mesh as a template. The solution formed a stable liquid-bridge network between contact points of the screen mesh and the substrate after being dropped onto the mesh placed on the substrate. Drying of the solution yielded grid or dotted patterns, depending on the concentration of PVA. Etching of the Cu film covered with the PVA pattern was done with a FeCl3 methanolic solution to form a grid-patterned Cu electrode. Although some underetching was observed, adjusting the etching time gave a fine line network of Cu with the PVA coated thoroughly. The Cu grid electrode showed a transparency of 87.2 ± 5.2% at 550 nm and 6.1 ± 5.3 Ω □−1, which is comparable to or greater than that of the conventional ITO. Furthermore, we found that the PVA coating barrier significantly enhanced the oxidation resistance of the Cu grid electrode.
中文翻译：
通过蚀刻使用丝网图案化的基于 PVA 的保护层来制造空气稳定的透明铜栅电极†
作为传统氧化铟锡（ITO）电极的替代品，通过通过聚乙烯醇（PVA）基保护层在柔性聚萘二甲酸乙二醇酯薄膜上蚀刻溅射铜来制造透明铜栅电极。Cu 上 PVA 基聚合物的掩蔽图案是通过使用丝网作为模板蒸发含有 PVA 基聚合物的水溶液而生成的。将溶液滴到放置在基材上的筛网上后，在筛网和基材的接触点之间形成稳定的液桥网络。溶液干燥后会产生网格或点状图案，具体取决于 PVA 的浓度。用FeCl 3甲醇溶液蚀刻覆盖有PVA图案的Cu膜以形成网格图案的Cu电极。尽管观察到一些蚀刻不足，但调整蚀刻时间可得到带有 PVA 彻底涂覆的 Cu 细线网络。Cu栅电极在550 nm处表现出87.2 ± 5.2%的透明度和6.1 ± 5.3 Ω □ -1，这与传统ITO相当或更高。此外，我们发现PVA涂层阻挡层显着增强了铜栅电极的抗氧化性。
更新日期：2018-04-19
中文翻译：
通过蚀刻使用丝网图案化的基于 PVA 的保护层来制造空气稳定的透明铜栅电极†
作为传统氧化铟锡（ITO）电极的替代品，通过通过聚乙烯醇（PVA）基保护层在柔性聚萘二甲酸乙二醇酯薄膜上蚀刻溅射铜来制造透明铜栅电极。Cu 上 PVA 基聚合物的掩蔽图案是通过使用丝网作为模板蒸发含有 PVA 基聚合物的水溶液而生成的。将溶液滴到放置在基材上的筛网上后，在筛网和基材的接触点之间形成稳定的液桥网络。溶液干燥后会产生网格或点状图案，具体取决于 PVA 的浓度。用FeCl 3甲醇溶液蚀刻覆盖有PVA图案的Cu膜以形成网格图案的Cu电极。尽管观察到一些蚀刻不足，但调整蚀刻时间可得到带有 PVA 彻底涂覆的 Cu 细线网络。Cu栅电极在550 nm处表现出87.2 ± 5.2%的透明度和6.1 ± 5.3 Ω □ -1，这与传统ITO相当或更高。此外，我们发现PVA涂层阻挡层显着增强了铜栅电极的抗氧化性。
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