Our official English website, www.x-mol.net, welcomes your
feedback! (Note: you will need to create a separate account there.)
Investigation into Co and Ga2O3 co-doped ZnSe chalcogenide composite semiconductor thin films fabricated using PLD
RSC Advances ( IF 3.9 ) Pub Date : 2018-04-19 00:00:00 , DOI: 10.1039/c8ra02466a Yong Pan 1 , Li Wang 1 , XuQiong Su 1 , ShuFeng Li 1 , DongWen Gao 1 , XiaoWei Han 1 , HuanHuan Yan 1
RSC Advances ( IF 3.9 ) Pub Date : 2018-04-19 00:00:00 , DOI: 10.1039/c8ra02466a Yong Pan 1 , Li Wang 1 , XuQiong Su 1 , ShuFeng Li 1 , DongWen Gao 1 , XiaoWei Han 1 , HuanHuan Yan 1
Affiliation
|
(Ga2O3)0.1(Co)0.5(ZnSe)0.4 thin films were fabricated via PLD at different pressures and substrate temperatures. The influence of different preparation conditions on the thin films was deeply explored through investigating the structural, optical and electromagnetic properties, and surface morphologies. The thicknesses of the thin films were greatly affected by the preparation conditions. The poor light transmittance of the thin films under conditions of 4 Pa and 600 °C was revealed through refractive index measurements. The stable amorphous structure was confirmed via XRD. The optimum preparation conditions, room temperature, 800 °C and 10 Pa, were reflected in the transmission spectra. Greater energy transfer between each of the energy levels and more activity under the temperature conditions used were indicated through PL spectra. The lower resistivity and higher carrier concentration in the quartz substrate were shown in the results of Hall effect measurements. The significant impact of high temperature preparation conditions on the thin films was visualised using AFM. All of the results indicated that the properties of the thin films are significantly influenced by the preparation conditions. Furthermore, a semiconductor chalcogenide material with excellent optical and electromagnetic properties was proposed in this investigation.
中文翻译：
PLD 制备 Co 和 Ga2O3 共掺杂 ZnSe 硫族化物复合半导体薄膜的研究
(Ga 2 O 3 ) 0.1 (Co) 0.5 (ZnSe) 0.4通过PLD在不同压力和衬底温度下制备薄膜。通过研究结构、光学和电磁性能以及表面形貌，深入探讨了不同制备条件对薄膜的影响。薄膜的厚度受制备条件的影响较大。通过折射率测量发现薄膜在4 Pa和600 °C条件下透光率较差。通过XRD 证实了稳定的非晶结构。最佳制备条件为室温、800℃和10Pa，反映在透射光谱中。通过 PL 光谱表明每个能级之间的能量转移更大，并且在所用温度条件下活性更高。霍尔效应测量结果显示石英衬底中较低的电阻率和较高的载流子浓度。使用 AFM 可视化高温制备条件对薄膜的显着影响。所有结果表明薄膜的性能受制备条件的显着影响。此外，本研究还提出了一种具有优异光学和电磁性能的半导体硫族化物材料。
更新日期：2018-04-19
中文翻译：
PLD 制备 Co 和 Ga2O3 共掺杂 ZnSe 硫族化物复合半导体薄膜的研究
(Ga 2 O 3 ) 0.1 (Co) 0.5 (ZnSe) 0.4通过PLD在不同压力和衬底温度下制备薄膜。通过研究结构、光学和电磁性能以及表面形貌，深入探讨了不同制备条件对薄膜的影响。薄膜的厚度受制备条件的影响较大。通过折射率测量发现薄膜在4 Pa和600 °C条件下透光率较差。通过XRD 证实了稳定的非晶结构。最佳制备条件为室温、800℃和10Pa，反映在透射光谱中。通过 PL 光谱表明每个能级之间的能量转移更大，并且在所用温度条件下活性更高。霍尔效应测量结果显示石英衬底中较低的电阻率和较高的载流子浓度。使用 AFM 可视化高温制备条件对薄膜的显着影响。所有结果表明薄膜的性能受制备条件的显着影响。此外，本研究还提出了一种具有优异光学和电磁性能的半导体硫族化物材料。
京公网安备 11010802027423号