The wetting property of PEDOT:PSS solution as the hole injection layer in solution processed quantum-dot light-emitting diodes (QLED) in normal architecture is usually ignored and its effect on device performance is barely noticed. By cooperating the optimized isopropanol additive concentration and matched annealing temperature, we show that the wetting ability of PEDOT:PSS solution is enhanced effectively with the film roughness decrease remarkably from 2.36 nm to 1.11 nm, meanwhile the film crystallization quality can get enhanced steadily. Furthermore, the hole injection efficiency of PEDOT:PSS film get enhanced, and the conduction shows a more than 2-fold increase. Finally, the best-performing device with improved electronic properties is achieved. The main findings in present work may offer a practicable strategy for further research, leading to achieve more efficient solution processed QLEDs.

通常，在普通体系结构中，作为溶液注入的量子点发光二极管（QLED）中的空穴注入层的PEDOT：PSS溶液的润湿性通常被忽略，并且几乎没有注意到其对器件性能的影响。通过优化的异丙醇添加剂浓度和匹配的退火温度，我们发现PEDOT：PSS溶液的润湿能力得到了有效提高，膜的粗糙度从2.36 nm显着降低到1.11 nm，同时膜的结晶质量也得到了稳定的提高。此外，PEDOT：PSS薄膜的空穴注入效率得到了提高，并且导电性显示出超过2倍的增长。最终，获得了具有改进的电子性能的性能最佳的设备。当前工作的主要发现可能会为进一步研究提供可行的策略，