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Boosting Charge Separation and Transfer by Plasmon-Enhanced MoS2/BiVO4 p–n Heterojunction Composite for Efficient Photoelectrochemical Water Splitting
ACS Sustainable Chemistry & Engineering ( IF 7.1 ) Pub Date : 2018-04-13 00:00:00 , DOI: 10.1021/acssuschemeng.8b00170
Qingguang Pan 1, 2, 3 , Chi Zhang 1 , Yunjie Xiong 1, 2, 3 , Qixi Mi 2 , Dongdong Li 1 , Liangliang Zou 1 , Qinghong Huang 1 , Zhiqing Zou 1 , Hui Yang 1, 2
Affiliation  

The poor separation and significant recombination of electron–hole pairs and slow transfer mobility of charge carriers limit the performance of BiVO4 for photoelectrochemical (PEC) water splitting. To ameliorate the above problems, a novel integrated Ag-embedded MoS2/BiVO4 p–n heterojunction ternary composite electrode is fabricated and applied. Surface plasmon resonance (SPR) of Ag nanoparticles (NPs) by the near-field electromagnetic enhancement or abundant hot electrons injection and p–n heterojunction of MoS2/BiVO4 by the built-in electrical potential synergistically boost the electron–hole pair separation, transfer properties and suppress the recombination of the electron–hole pairs. Consequently, the BiVO4−Ag−MoS2 electrode among four of the BiVO4-based electrodes achieves the largest photocurrent density of 2.72 mA cm–2 at 0.6 V vs RHE, which is 2.44 times higher than that of pure BiVO4 electrode (0.79 mA cm–2), and possesses the largest IPCE of 51% at 420 nm. This work proposes a worthy design strategy for a plasmon enhanced p–n heterojunction for efficient PEC water splitting.

中文翻译:

等离子体增强的MoS 2 / BiVO 4 p–n异质结复合物促进电荷分离和转移,从而实现高效的光电化学水分解

电子-空穴对的差的分离和明显的重组以及电荷载流子的缓慢迁移迁移率限制了BiVO 4在光电化学(PEC)水分解中的性能。为了解决上述问题,制造并应用了一种新型的集成Ag嵌入的MoS 2 / BiVO 4 p–n异质结三元复合电极。通过近场电磁增强或大量热电子注入以及MoS 2 / BiVO 4的p–n异质结,Ag纳米颗粒(NPs)的表面等离子体共振(SPR)内置电位的协同作用可促进电子-空穴对的分离,传递特性并抑制电子-空穴对的复合。因此,在基于BiVO 4的四个电极中,BiVO 4 -Ag-MoS 2电极在0.6 V vs RHE时可达到2.72 mA cm –2的最大光电流密度,是纯BiVO 4电极的2.44倍( 0.79 mA cm –2),并在420 nm处具有最大IPCE,为51%。这项工作提出了一种用于高效PEC水分解的等离激元增强的p–n异质结的有价值的设计策略。
更新日期:2018-04-13
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