We report a general strategy for obtaining high-quality, large-area metal-chalcogenide semiconductor films from precursors combining chelated metal salts with chalcoureas or chalcoamides. Using conventional organic solvents, such precursors enable the expeditious formation of chalco-gels, which are easily transformed into the corresponding high-performance metal-chalcogenide thin films with large, uniform areas. Diverse metal chalcogenides and their alloys (MQ _x : M = Zn, Cd, In, Sb, Pb; Q = S, Se, Te) are successfully synthesized at relatively low processing temperatures (<400°C). The versatility of this scalable route is demonstrated by the fabrication of large-area thin-film transistors (TFTs), optoelectronic devices, and integrated circuits on a 4-inch Si wafer and 2.5-inch borosilicate glass substrates in ambient air using CdS, CdSe, and In₂Se₃ active layers. The CdSe TFTs exhibit a maximum field-effect mobility greater than 300 cm² V^-1 s^-1 with an on/off current ratio of >10⁷ and good operational stability (threshold voltage shift < 0.5 V at a positive gate bias stress of 10 ks). In addition, metal chalcogenide-based phototransistors with a photodetectivity of >10¹³ Jones and seven-stage ring oscillators operating at a speed of ~2.6 MHz (propagation delay of < 27 ns per stage) are demonstrated.

中文翻译：

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高性能和可扩展的金属硫族化物半导体和器件，通过硬质合金凝胶路线。

我们报告了从结合螯合物金属盐与查库尔或查尔酰胺的前体中获得高质量，大面积金属硫属化物半导体膜的一般策略。通过使用常规有机溶剂，此类前体能够迅速形成硫醇凝胶，这些凝胶很容易转变为具有大面积均匀面积的相应高性能金属硫属化物薄膜。多种金属硫属元素化物及其合金（MQ _x ：M ＝ Zn，Cd，In，Sb，Pb；Q = S，Se，Te）是在相对较低的加工温度（<400°C）下成功合成的。使用CdS，CdSe在环境空气中在4英寸Si晶圆和2.5英寸硼硅酸盐玻璃基板上制造大面积薄膜晶体管（TFT），光电器件和集成电路，证明了这种可扩展路线的多功能性。 ，以及In ₂ Se ₃有源层。CdSe TFT的最大场效应迁移率大于300 cm ² V ^-1 s ^-1，开/关电流比> 10 ⁷以及良好的工作稳定性（在10 ks的正栅极偏置应力下，阈值电压漂移<0.5 V）。此外，还证明了具有大于10 ¹³ Jones的光探测性的基于金属硫族化物的光电晶体管和以〜2.6 MHz的速度运行的七级环形振荡器（每级的传播延迟<27 ns）。