Bismuth, one of the heaviest semimetals in nature, ignited the interest of the materials physics community for its potential impact on topological quantum material systems that use its strong spin-orbit coupling and unique orbital hybridization. In particular, recent theoretical predictions of unique topological and superconducting properties of thin bismuth films and interfaces prompted intense research on the growth of submonolayers to a few monolayers of bismuth on different substrates. Similar to bulk rhombohedral bismuth, the initial growth of bismuth films on most substrates results in buckled bilayers that grow in either the (111) or (110) directions, with a lattice constant close to that of bulk Bi. By contrast, we show a new growth pattern for bismuth monolayers on NbSe₂. We find that the initial growth of Bi can form a strongly bonded commensurate layer, resulting in a compressively strained two-dimensional (2D) triangular lattice. We also observed unique pattern of 1D ripples and domain walls is observed. The single layer of bismuth also introduces strong marks on the electronic properties at the surface.

中文翻译：

---

接缝处破裂：NbSe2 上的波纹单层铋。


铋是自然界中最重的半金属之一，因其对利用其强自旋轨道耦合和独特轨道杂化的拓扑量子材料系统的潜在影响而引起了材料物理学界的兴趣。特别是，最近对薄铋膜和界面的独特拓扑和超导特性的理论预测促使人们对不同基底上的亚单层到几个单层铋的生长进行了深入的研究。与块体菱面体铋类似，铋薄膜在大多数基底上的初始生长会导致在（111）或（110）方向生长的屈曲双层，其晶格常数接近块体Bi的晶格常数。相比之下，我们展示了 NbSe ₂上铋单层的新生长模式。我们发现 Bi 的初始生长可以形成强键合的相应层，从而产生压缩应变的二维 (2D) 三角形晶格。我们还观察到了一维波纹和畴壁的独特图案。单层铋还在表面的电子特性上引入了强烈的标记。